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Lead-free halide double perovskites (DPs) are highly tunable materials in terms of chemical composition and optical properties. One of the most widely reported DPs is Cs2AgBiBr6, which is envisaged as a promising absorber for photovoltaics. Nevertheless, its bandgap (around 1.9−2.3 eV) remains too large for common tandem solar cells. In this work, we report the mechanochemical synthesis of Sn-, Ge-, and Zn-substituted Cs2AgBiBr6 in powder form; their bandgaps reach 1.55, 1.80, and 2.02 eV, respectively. These differences are rationalized through density functional theory calculations, demonstrating combined electronic and structural (disorder) effects introduced by the divalent metal-cation substituents. Finally, we present the first vacuum-deposited thin films of the Sn-substituted DP, which also show a notable narrowing of the bandgap, and this paves the way toward its implementation in photovoltaic solar cells.

Fully inorganic cesium lead halide perovskites, such as CsPbI2Br, show enhanced thermal stability compared to hybrid ones and are being widely investigated as wide bandgap absorbers for tandem applications. Despite their simple stoichiometry, the preparation of highly crystalline and stable cesium lead halide thin films is not trivial. In general, high-efficiency solar cells based on solution-processed CsPbI2Br thin films are prepared by hightemperature annealing or the use of chemical additives. In this work, we use solvent-free synthesis to investigate the formation of CsPbI2Br in bulk or in thin films via mechanochemical synthesis and multiple-source vacuum deposition, respectively. We demonstrate the importance of fostering halide alloying in the vacuum processing of inorganic lead halide perovskites, which can be attained either by using mixed halide precursors or by increasing the number of precursors (and hence deposition sources). These strategies lead to highly oriented perovskite films even at room temperature, with improved optoelectronic properties. We obtained promising power conversion efficiencies of 8.3% for solar cells employing asdeposited perovskites (without any annealing) and 10.0% for devices based on CsPbI2Br annealed at low temperatures (150 °C). This study allowed us to highlight the most promising processes and strategies to further optimize the material deposition as well as the solar cell architecture. Hetero-structures for Efficient Luminescent Devices (HELD) REFERENCIA: 834431 PCIN-2019-111829-2

Non-toxic alternatives to lead halide perovskites are highly sought after for applications in optoelectronics. Blue-luminescent materials are especially demanded as they could be used to prepare white light-emitting diodes, with important potential applications in lighting systems. However, wide bandgap blue emitters with high photoluminescence quantum yields (PLQY) are typically more difficult to obtain as compared to green- or red-emitting ones. Here, we prepared two series of inorganic cesium copper halides, with the general formulas Cs3Cu2X5 and CsCu2X3 (X = Cl, Br, I, and mixtures thereof) by dry mechanochemical synthesis at room temperature. X-ray diffraction demonstrates quantitative conversion of binary precursors into the desired ternary structures and good halide mixing in single-phase compounds. We identified Cs3Cu2I5 as the most promising material as it maintains blue luminescence centered at 442 nm with high PLQY (>40%) after several days in air (Cs3Cu2Cl5 shows significantly higher PLQY over 80% but is unstable in air). Based on this, we fabricated homogeneous and pinhole-free Cs3Cu2I5 thin films by thermal single-source vacuum deposition. Crystalline phase and photoluminescence are maintained in the thin films, validating that these low-toxicity materials can be synthesized and processed by fully solvent-free routes for a widespread implementation in optoelectronic devices.

Fully inorganic cesium lead halide perovskite thin films were prepared by an easy, fast and dry process based on single-source vacuum deposition. We investigated the structural and optical characteristics of the so-formed films as a function of chemical composition (chloride, bromide and iodide films were formed), post-deposition thermal annealing, as well as previous mechanosynthesis of perovskite powders. We found out that the CsPbX3 perovskite was preferentially formed for the smaller halides and favored by previous ball-milling of CsX and PbX2 precursors. When bigger halides were used and/or CsX and PbX2 precursors were simply mixed without previous mechanosynthesis, PbX2-rich compounds such as CsPb2X5 were preferentially formed in the thin films.

Cs2AgBiBr6 has been proposed as a promising lead-free and stable double perovskite alternative to hybrid and lead-based perovskites. However, the low solubility of precursors during wet synthesis, or the distinct volatility of components during evaporation, results in complex multistep synthesis approaches, hampering the widespread employment of Cs2AgBiBr6 films. Here, we present pulsed laser deposition of Cs2AgBiBr6 films as a dry, single-step and single-source deposition approach for high-quality film formation. Cs2AgBiBr6 powders were prepared by mechanochemical synthesis and pressed into a solid target maintaining phase purity. Controlled laser ablation of the double perovskite target in vacuum and a substrate temperature of 200 °C results in the formation of highly crystalline Cs2AgBiBr6 films. We discuss the importance of deposition pressure to achieve stoichiometric transfer and of substrate temperature during PLD growth to obtain high-quality Cs2AgBiBr6 films with grain sizes > 200 nm. This work demonstrates the potential of PLD, an established technique in the semiconductor industry, to deposit complex halide perovskite materials while being compatible with optoelectronic device fabrication, such as UV and X-ray detectors.