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The Ln4[Ga 2(1-x) Ge 2x O 7+x □ 1-x ]O 2 (Ln = La, Nd, Gd; x ≤ 0.4) compounds have been prepared first by solid-state reaction and then by a new regenerative sol-gel method which allows their sintering. They exhibit a Cuspidine-like structure. Upon substituting Ge 4+ for Ga 3+ , the Cuspidine structure is maintained up to x = 0.4. For x ≥ 0.15 a 1D modulation of the structure was observed and analyzed as driven by composition. The Ge 4+ substitution for Ga 3+ with concomitant filling of oxygen vacancies is beneficial to the anionic conductivity which increases rather regularly with x to reach 10 -3 S/cm at 800 °C for x = 0.4 and Ln = Nd. Conductivity measurements on Ln4[Ga 2(1-x) Ge 2x O 7+x □ 1-x ]O 2 (Ln = La, Nd, Gd) compounds with a fixed Ge content (x = 0.2) show a clear increase of the activation energy when the ionic radii of the Ln 3+ cation decreases. La and Nd compounds exhibit similar conductivities, significantly larger than that of the Gd counterpart.