1. Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn2S4-xSex (1.75 ≤ x ≤ 2.75)
- Author
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Monoj Pramanik, H. Haeuseler, B. K. Samanta Ray, D. Palit, W. Cordes, B. K. Mathur, A. K. Kar, and Suneel Kumar Srivastava
- Subjects
Materials science ,Condensed matter physics ,Band gap ,General Chemical Engineering ,General Chemistry ,Microstructure ,Crystallographic defect ,law.invention ,Electrical resistivity and conductivity ,law ,Materials Chemistry ,Crystallite ,Scanning tunneling microscope ,Anisotropy ,Stacking fault - Abstract
The present paper deals with the microstructural parameters calculated from X-ray diffraction data, electrical and optical investigations, and scanning tunneling microscopy (STM) studies on ZnIn2S4 IIIa layer type CdIn2S4-xSex (1.75 ≤ x ≤ 2.75) quaternary chalcogenides. Microstructural parameters such as dislocation density, root-mean-square strain, stacking fault probability, crystallite size anisotropy, and layer disorder parameters of these compounds have been calculated. The temperature variation of electrical conductivity (25−400 °C) confirmed semiconducting behavior. The band gaps of all these compounds obtained from STM and optical measurements are in the range 1.57−1.77 eV and are comparable to each other irrespective of the technique used.
- Published
- 2001
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