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The photoelectrochemical etching of n-MoSe2 was investigated. The photocurrent of a regenerative photoelectrochemical cell comprising the above material in polyiodide solution is improved quite significantly following that treatment. Best results were obtained when the photoelectrode was photoetched under short circuit conditions and high irradiance. As was previously observed, for other layered compounds, very few etch pits are produced. This is rather surprising in view of the morphology of photoetched CdSe and the like. We discuss this point in detail and give first hints to explain this difference.

Einzelne Glieder aus der im Titel genannten Mischkristallreihe werden durch chemische Transportreaktionen aus den Elementen dargestellt.

The normal spinels CdFe204, CdGa1.8Fe0.204 and CdRh1.8Fe0.204 were prepared, and their magnetic susceptibilities were measured. The low micro eff value of 4.72 (5) micro B found for CdFe204 can be attributed to hybridization of the 6S and 4G wavefunctions resulting from spin-orbit interaction coupled with strong crystal fields having trigonal components at the spinal B-sites. Magnetic crystal fields having trigonal components at the spinel B-sites. Magnetic susceptibility was sensitive to the homogeneity of samples of CdGa1.8Fe0.204 and CdRh1.8Fe0.204, which was dependent upon the method of preparation. For homogeneous samples, the magnetic susceptibility approaches the theoretical value for high-spin Fe3+(3d5). The slight remaining discrepency from spin-only moment is due to the statistical existence of a few small Fe3+ clusters.