1. Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties
- Author
-
Anjan Chatterjee, T.H Yang, C.H Chen, H.Y Li, Li-Chyong Chen, Kuei-Hsien Chen, C.T Wu, and J.T Lo
- Subjects
Number density ,Materials science ,General Physics and Astronomy ,Mineralogy ,chemistry.chemical_element ,chemistry.chemical_compound ,Field electron emission ,chemistry ,Chemical engineering ,Rapid thermal processing ,Silicon carbide ,Nanorod ,Wafer ,Physical and Theoretical Chemistry ,Thin film ,Carbon - Abstract
Silicon carbide nanorods with a typical diameter of about 20 nm and a length ranging from 100 nm to a few microns have been formed by rapid thermal processing (RTP) of thin films containing a mixture of carbon and iron over silicon wafers at temperatures ranging from 1000 to 1200 °C. It is proposed that SiC nanorods were formed by solid–liquid–solid process of Si and C with Fe as catalyst. The controllability offered by RTP is crucial as field emission study showed that the turn-on field of the SiC nanorods was a strong function of their length and number density.
- Published
- 2003