1. Large temperature range model for theatmospheric pressure chemical vapor deposition ofsilicon dioxide films on thermosensitive substrates
- Author
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Konstantina Christina Topka, George Alexander Chliavoras, Diane Samélor, Daniel Sadowski, François Senocq, Constantin Vahlas, Hugues Vergnes, Brigitte Caussat, Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC), Laboratoire de Génie Chimique (LGC), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université Fédérale Toulouse Midi-Pyrénées
- Subjects
Ozone ,Materials science ,Silicon dioxide ,Matériaux ,General Chemical Engineering ,02 engineering and technology ,Chemical vapor deposition ,engineering.material ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,Reaction rate ,chemistry.chemical_compound ,[CHIM.GENI]Chemical Sciences/Chemical engineering ,Coating ,Thermal ,Génie chimique ,Génie des procédés ,Range (particle radiation) ,TEOS ,General Chemistry ,[CHIM.MATE]Chemical Sciences/Material chemistry ,Computational Fluid Dynamics ,Atmospheric temperature range ,Kinetic model ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,chemistry ,Chemical engineering ,engineering ,0210 nano-technology - Abstract
International audience; Coating complex surfaces by functional amorphous silica films for new applications including energy harvesting and health depends on the operating range and robustness of their deposition process. In this paper, we propose a new kinetic model for the atmospheric pressure chemical vapor deposition of SiO2 films from TEOS/O2/O3 valid in the 150−520 °C temperature range, thus allowing for treating thermally sensitive substrates. For this, we revisit reported chemical schemes in Computational Fluid Dynamics simulations considering original experimental data on the deposition rate of SiO2 films from a hot-wall reactor. The new model takes into account for the first time a thermal dependency of the direct formation of SiO2 from TEOS and O3 and yields excellent agreement in both shape and value between experimental and calculated local deposition rate profiles. The model provides non-measurable information such as local distributions of species concentration and reaction rates, which are valuable for developing optimized CVD reactor designs. Original solutions for the introduction of the reactants are proposed, to uniformly coat complex and/or large parts at a wide temperature range.
- Published
- 2020