Search

[Display omitted] • The epitaxial growth of BaZr 0.15 Ti 0.85 O 3 thin films on Si was realized by La 0.67 Sr 0.33 MnO 3 /CeO 2 /YSZ buffer layer. • Energy storage performance of the Si-integrated film Capacitors can be significantly improved by the buffer layer. • High temperature performance can be further optimized by an extra layer of graphene. With the rapid development of advanced electronic devices towards miniaturization and integration, silicon integrated lead-free ferroelectric film capacitors have attracted extensive attention due to their excellent energy storage performance and fast charge/discharge speed. In this study, the BaZr 0.15 Ti 0.85 O 3 (BZT15) film capacitors have been epitaxially integrated on Si (0 0 1) substrate with the buffer layers of Graphene/La 0.67 Sr 0.33 MnO 3 /CeO 2 /Y 2 O 3 -stabilized ZrO 2 (G/L-C-Y). The highly epitaxial crystalline quality improves significantly the energy storage performance. The layer of G has been found to further improve the high temperature energy storage performance due to its heat dissipation effect. The energy storage density (W re) of the BZT15 film capacitor with the buffer layers reaches 112.35 J/cm3 with energy storage efficiency (η) of 76.7 % at room temperature, which is about 55.29 % and 9.18 % higher than that of the BZT15 film capacitor without buffer layers, respectively. Moreover, the BZT15 film capacitor with the buffer layer shows an ultra-high W re of 70.36 J/cm3 and an ultra-high η of 81.22 % at 200 °C, which are 74.55 % and 17.13 % higher than that of BZT15 film capacitor without buffer layer. More importantly, the fluctuation of W re and η of optimized BZT15 film capacitor is only 8.85 % and 1.30 % in the wide temperature range from −100 to 200 °C, respectively. Our studies provide an effective multi-strategy approach combining interface designing and thermal management for the epitaxially integration of dielectric film capacitors on Si substrates to obtain ultra-high energy storage performance in ultra-wide working temperature. [ABSTRACT FROM AUTHOR]