1. Perovskite intermediate phase FAPbBr3·DMSO assisted in-situ growth of FAPbBr3 polycrystalline wafer for X-ray detection and imaging.
- Author
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Liu, Dan, Jiang, Wei, Dong, Siyin, Di, Haipeng, Li, Haibin, Xing, Zhenning, Wang, Hongbing, Ren, Jiwei, Zheng, Xiaojia, Lei, Lin, and Zhao, Yiying
- Subjects
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X-ray detection , *X-ray imaging , *CRYSTAL growth , *DIMETHYL sulfoxide , *CRYSTAL grain boundaries - Abstract
This work demonstrated a perovskite intermediate assisted hot-pressing method to fabricate FAPbBr 3 polycrystalline wafer X-ray detectors with near-single-crystal performance. The DMSO vapor released from the decomposition of FAPbBr 3 ·DMSO during the hot-pressing process will promote the in-situ growth of FAPbBr 3 crystal grains and improve the crystallinity, resulting in remarkable X-ray detection performance. [Display omitted] • FAPbBr 3 ·DMSO intermediate perovskite phase assisted hot-pressing approach. • In-situ FAPbBr 3 crystal growth promoted by DMSO vapor from FAPbBr 3 ·DMSO. • Quality improvement of polycrystalline perovskite wafers by hot-pressing process. • Polycrystalline FAPbBr 3 with X-ray detection properties similar to single crystals. Polycrystalline perovskite wafers featured in customizable in dimensions and thickness, represent a frontier in mass production of X-ray detectors. Nevertheless, inherent low crystallinity, elevated defect density, and grain boundaries in polycrystalline wafers typically impair the detection performance. Herein, a novel hot-pressing approach employing the perovskite intermediate phase FAPbBr 3 ·DMSO was demonstrated to improve the quality and X-ray detection performance of polycrystalline perovskite wafers. The in-situ growth of FAPbBr 3 wafers were promoted via dimethyl sulfoxide (DMSO) vapor released from the decomposition of FAPbBr 3 ·DMSO phase during the hot-pressing process, resulting in compact morphology, large grain size, superior crystallinity and diminished defect density. The resulted wafers exhibit a high ion activation energy (E a) of 0.45 eV and a substantial mobility-lifetime product (μτ) of 7.41 × 10−4 cm2 V−1. These advancements equip FAPbBr 3 wafer-based detectors with remarkable sensitivity of 3694.6 μC Gy air −1 cm−2, low detection limit (LoD) of 43.8 nGy air s−1, and stable operational performance, comparable to that of single-crystal alternatives. Moreover, the detectors exhibit exceptional X-ray imaging capabilities with a spatial resolution of 4.41 lp mm−1. Thus, the thermally induced decomposition characteristic of perovskite intermediate phase presents a novel avenue for the amelioration of polycrystalline perovskite wafers, heralding a leap forward in X-ray detection performance. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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