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The composite thin film photodetector in this study combines the characteristics of MAPbI 3 material for near-ultraviolet-visible light and PDPP3T:PC71BM material for near-infrared light absorption, resulting in efficient light harvesting. To fabricate high-performance photodetectors, we optimized the photodetector structure, thin film fabrication process, solute concentration, and photoactive layer thickness. Finally, we obtained a photodetector with a broad spectral detection range in the near-ultraviolet-visible-near-infrared (UV–vis–NIR). The detectivity (D*) of our prepared UV–vis–NIR photodetector at 380 nm, 655 nm and 848 nm is 1.24 × 1013 jones, 2.13 × 1013 jones and 1.59 × 1013 jones, respectively. This is one of the best performances among polymer photodetectors reported so far and is comparable to commercial inorganic silicon-based PDs. In addition, the optimal composite thin film photodetector exhibits a fast response speed (t rise /t fall = 109/49 μs), a linear dynamic range of 100 dB, and excellent stability. Furthermore, the PDPP3T:PC71BM active layer can effectively suppress the leakage current in the reverse biased region, which enables the device to obtain an ultra-low dark current density (J dark) of 8.58 × 10−10 A cm−2. This study explores a new avenue for high-performance photodetectors based on mixtures of perovskites and low-bandgap photoactive polymers. [ABSTRACT FROM AUTHOR]