1. Bandgap engineering of Cu2InxZn1−xSn(S,Se)4 alloy films for photovoltaic applications.
- Author
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Wu, Yanjie, Zhang, Yu, Sui, Yingrui, Wang, Zhanwu, Lv, Shiquan, Wei, Maobin, Sun, Yunfei, Yao, Bin, Liu, Xiaoyan, and Yang, Lili
- Subjects
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SCANNING electron microscopy , *BAND gaps , *PHOTOVOLTAIC power generation , *SOLAR cell efficiency , *X-ray diffraction - Abstract
Bandgap engineering of Cu 2 In x Zn 1−x Sn(S,Se) 4 alloy films for photovoltaic application has been investigated. Cu 2 In x Zn 1−x Sn(S,Se) 4 (0 ≤ x ≤ 0.6) alloy films with different In contents and a single kieserite phase were fabricated by using a simple low-cost sol-gel method. The influence of In content on the structure, morphology, and optical and electrical properties of Cu 2 In x Zn 1−x Sn(S,Se) 4 films was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscope (TEM), X-Ray photoelectron spectroscopy (XPS), optical absorbance, and room-temperature Hall measurements. The results of XRD, TEM, and XPS demonstrated the substitution of some Zn atoms by In in Cu 2 In x Zn 1−x Sn(S,Se) 4 films. The Hall measurements show that the carrier concentration of the Cu 2 In x Zn 1−x Sn(S,Se) 4 (0 ≤ x ≤ 0.6) decreases with increasing In content and that the p-type Cu 2 In x Zn 1−x Sn(S,Se) 4 films with preferable electrical properties can be obtained by adjusting the In content during film deposition. The optical measurements indicate that the bandgap of Cu 2 In x Zn 1−x Sn(S,Se) 4 films with kesterite structure can be continuously tuned in the range of 1.13–1.01 eV as x is increased from 0 to 0.6. Our results show that the Cu 2 In x Zn 1−x Sn(S,Se) 4 alloy is a potentially applicable material for bandgap grading absorption layers in high-power-conversion-efficiency solar cells. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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