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Abstract: (K,Na)NbO3 ferroelectric films were grown on LaNiO3 coated silicon substrates by RF magnetron sputtering. The conductive LaNiO3 films acted as seed layers and induced the highly (001) oriented perovskite (K,Na)NbO3 films. Such films exhibit saturated hysteresis loops and have a remnant polarization (2P r) of 23μC/cm2, and coercive field (2E c) of 139kV/cm. The films showed a fatigue-free behavior up to 109 switching cycles. A high tunability of 65.7% (@300kV/cm) was obtained in the films. The leakage current density of the films is about 6.0×10−8 A/cm2 at an electric field of 50kV/cm. [Copyright &y& Elsevier]

Abstract: xPb(Mg1/3Nb2/3)O3–(1−x)Pb(Zr0.47Ti0.53)O3(xPMN–(1−x)PZT) (0.15≤x≤0.30) ceramics were prepared by the conventional oxide-mixed method. The phase structure, ferroelectric and piezoelectric properties and field-induced strain behavior were systematically investigated. It was found that 0.25PMN−0.75PZT possessed superior electrical properties due to its composition close to the MPB (Morphotropic Phase Boundary). The composition near the MPB enables the existence of multiple polarization directions and consequently facilitates the domain reorientation, which should be responsible for the superior electrical properties. A large remnant polarization (P r ) of 34.2µC/cm2 and a high piezoelectric coefficient (d 33) of 698pC/N were obtained. Especially, a large field-induced strain of 2.2‰ (at 40kV/cm) was attained, which shows a great promise for actuator applications. [Copyright &y& Elsevier]