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We report an effect in vertically-aligned carbon nanotube growth in which small catalyst features in proximity to large features show an enhanced growth rate. We apply this so-called “synergetic growth” effect in micrometer-scale patterns to produce vertical-like growth horizontally. This approach enables carbon nanotube integration into device applications requiring a fair degree of carbon nanotube alignment. The synergetic growth effect corroborates growth mechanisms describing carbon nanotube growth as a more complex process than elemental carbon supersaturating metal catalyst.

The carbon source and growth conditions for single-walled carbon nanotube (SWCNT) growth in hot-wall chemical vapor deposition affect the chirality of the SWCNT ensemble produced. Raman spectroscopy elucidates the trends of the SWCNT semiconducting percentage grown under different conditions. Field-effect transistors using few SWCNTs per transistor were fabricated to allow for a semiconducting SWCNT enumeration and to confirm these trends. The semiconducting SWCNT percent in isopropanol-based devices peaked at 800 °C with 85% semiconducting. 2-Butanol-based and methane-based devices were 70% and 32% semiconducting, respectively.