1. Reflectance Modification in Nanostructured Silicon Layers with Gradient Porosity
- Author
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Dana Yermukhamed, Vladimir Sivakov, V. Yu. Timoshenko, Irina N. Zavestovskaya, Z. A. Suleimenova, G.K. Mussabek, and R. B. Assilbayeva
- Subjects
010302 applied physics ,Materials science ,Silicon ,business.industry ,Mie scattering ,Nanocrystalline silicon ,chemistry.chemical_element ,Porous silicon ,01 natural sciences ,Isotropic etching ,Electronic, Optical and Magnetic Materials ,010309 optics ,chemistry ,0103 physical sciences ,Optoelectronics ,Photonics ,Absorption (electromagnetic radiation) ,business ,Porosity - Abstract
A significant change in effective reflectance spectra of nanostructured porous silicon layers grown with different times of metal-assisted chemical etching is detected. The low reflectances at the level of 5–10% measured in the spectral range of 200–400 nm are explained by strong elastic scattering of light in combination with absorption in silicon nanostructures, while a reflectance increase in the range of 500–1800 nm, which is visually detected as a “white” layer appearance is associated with Mie scattering in silicon nanostructures with gradient porosity under conditions of weak optical absorption. The results obtained are discussed from the viewpoint of potential applications of “black” and “white” nanocrystalline silicon in photonics and sensorics.
- Published
- 2019
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