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Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates partly covered with silicon dioxide to produce SOI structures were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400°C after preamorphisation of the transition region layer/substrate. The implantation with a dose of 5×1017cm-2into the wafers with SOI structure resulted in a 1.5 μm wide overgrown crystalline layer.