1. Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells
- Author
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Marine Le Coz, Mustapha Lemiti, Corina Barbos, S. Parola, D. Blanc-Pélissier, G. Poulain, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Total M&S [Paris La Defense], and TOTAL FINA ELF
- Subjects
Materials science ,Photoluminescence ,Silicon ,minority carrier lifetime ,General Physics and Astronomy ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,7. Clean energy ,01 natural sciences ,[SPI.MAT]Engineering Sciences [physics]/Materials ,law.invention ,SiNx ,Monocrystalline silicon ,law ,Al2O3 ,0103 physical sciences ,Crystalline silicon ,010302 applied physics ,Laser ablation ,laser processing ,business.industry ,Surfaces and Interfaces ,General Chemistry ,Carrier lifetime ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,Surfaces, Coatings and Films ,chemistry ,silicon solar cells ,Optoelectronics ,photoluminescence ,ablation of dielectrics ,0210 nano-technology ,business - Abstract
Selective laser ablation of dielectric layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed on Al 2 O 3 , and bi-layers Al 2 O 3 /SiN X :H with a nanosecond UV laser at various energy densities ranging from 0.4 to 2 J cm −2 . Ablation threshold was correlated to the simulated temperature at the interface between the dielectric coatings and the silicon substrate. Laser-induced damage to the silicon substrate was evaluated by time-resolved photoluminescence. The minority carrier lifetime deduced from time-resolved photoluminescence was related to the depth of the heat affected zone in the substrate.
- Published
- 2016