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A simple and green method to functionalize carbon fiber (CF) with hydroxyl-terminated hyperbranched polymer (HTHBP) synthesized directly through one-pot condensation polycondensation between isophorone diisocyanate (IPDI) and tris (hydroxymethyl) aminomethane (TOAM) was reported. The covalent grafting of HTHBP on the CF surface can greatly increase the polar functional groups, roughness and wettability of CF surface, thereby resulting to significant enhancement of interfacial properties of composites. After grafting, the interlaminar shear strength (ILSS), interfacial shear strength (IFSS) and impact strength of CFs/epoxy composites increased from 58.6 to 81.8 MPa, 48.8 to 87.8 MPa and 55.7 to 76.9 kJ·m−2, respectively. Furthermore, this surface functionalization process could remedy the single fiber tensile strength. The interfacial reinforcing mechanism was also revealed by analyzing interfacial microstructure. This research provided a thought that constructing a continuous gradient modulus interphase layer with strong physicochemical interaction and good wettability by a simple and green method, which could reinforce the interfacial performance and have a bright prospect application in high-performance composite.

A charge trapping memory device using Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 (TATiAT) nanocomposite high-k dielectrics as charge trapping layer (CTL) and amorphous Al2O3 as the tunneling and blocking layers has been investigated, in which all the high-k dielectric films were fabricated by atomic layer deposition (ALD) technique. A large memory window of 10.0 V with higher charge trap density of 1.10 × 1013 cm−2 at gate voltage of ±10 V has been achieved. The better storage characteristic is attributed to the inter-diffusion between nanocomposite high-k oxides and the formation of more oxygen vacancies in CTL. The device shows the fast P/E speed and excellent endurance characteristics. A 70% initial memory window can be maintained after 10 years of retention by using the extrapolation method. The large conduction band offsets of 1.02 eV between TATiAT and Al2O3 is beneficial to retention characteristic due to the deep trap level.

The intrinsically moderate Li-ion diffusion coefficient and poor electronic conductivity of Li4Ti5O12 (LTO) restricts the practical application in Li-ion batteries. In view of the rapid two-dimensional diffusion channels in ionic conductor of LiNaAl22O34 for Li-ions, the LTO modified by combining equivalent molar ratio of LiAl11O17 with NaAl11O17 (LNAO) was fabricated by a simple reaction between LiNO3, Na2CO3, Al(NO3)3⋅9H2O and LTO at various sintering temperatures. The product with a LNAO/LTO mass ratio of 0.0106 and calcined at 600 °C achieved reversible capacities of 163.8, 160.6, 156.5, 150.9, 132.9 and 163.4 mAh g−1 at the current rates of 100, 200, 400, 800, 1600 and 100 mA g−1, respectively. Even cycled 800 times at 500 mA g−1, a capacity of 147.9 mAh g−1 was retained. The outstanding cycling and rate performance is attributable to the simultaneously formed LNAO coating on the LTO particles and superficial Al3+ doping in the LTO, achieving combined improvement in the ionic and electronic conductivities of LTO and thus boosting the comprehensive electrochemical performance of LTO.

A novel amine-based functionalization method was developed to improve the interfacial adhesion between TiO 2 NWs and CFs in supercritical water. The microstructure, morphology and mechanical properties of CFs were investigated. It was found that introducing hexamethylenetetramine (HMTA) dendrimers and branched polyethyleneimine (PEI) on CF could increase significantly the adhesion strength between CF and TiO 2 NWs and their interfacial shear strength with epoxy resin, and the order is CF-PEI-TiO 2 NWs > CF-HMTA-TiO 2 NWs > CF-COOH-TiO 2 NWs > CF-TiO 2 NW. Meanwhile, the reinforcing mechanisms and interfacial failure modes have also been discussed. We believe that these effective methods may provide theoretical foundation for the preparation of high performance composite materials.

The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaO x layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.

Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N2O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 °C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 °C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N2O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N2O precursors.

( 1 0 1 ¯ 0 ) m-plane ZnO film was epitaxially deposited on (1 0 0) γ-LiAlO2 by metal-organic chemical vapor deposition at 600 °C with a GaN buffer layer. The epitaxial relationships between ZnO and GaN, GaN and (1 0 0) γ-LiAlO2 were determined by X-ray diffraction Φ-scans. There exhibits very small decrease for the E2 mode shift (0.3 cm−1) of ZnO in the Raman spectrum, which indicates the epitaxial ZnO film was under a slight tensile stress (5.77 × 107 Pa). Unlike the highly strained a-plane ZnO, temperature dependent photoluminescence spectra show that the free A exiton emission was observed with the temperature ≤138 K.

We studied strained SiGe layers by Raman scattering. The SiGe layers were deposited by the Rapid Thermal Process, Very Low Pressure Chemical Vapor Deposition (RTP/VLP-CVD) method. We used Auger Electron Spectroscopy to detect the Ge composition in the SiGe layers. We found that the Ge composition is not uniform in strained SiGe layers. The uniformity can be improved by increasing the Ge content, by strain relaxation or dilution of the reactant gas with additional hydrogen.