1. Thickness dependent integrity of gate oxide on SOI
- Author
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S. Maegawa, Mikio Tsujiuchi, Hiroshi Umeda, T. Ipposhi, Yasuo Inoue, T. Iwamatsu, and Hideki Naruoka
- Subjects
Thickness dependent ,Materials science ,Dielectric strength ,business.industry ,Gate dielectric ,General Physics and Astronomy ,Silicon on insulator ,Time-dependent gate oxide breakdown ,Surfaces and Interfaces ,General Chemistry ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Gate oxide ,Optoelectronics ,Wafer ,business - Abstract
To investigate the gate oxide integrity for the silicon-on-insulator (SOI) wafer, we evaluated the time-dependent dielectric breakdown (TDDB) characteristic of gate oxide formed on SOI wafer with gate oxide thickness (T o x ) as a parameter. The TDDB characteristic was degraded with increasing the T o x of gate oxide for the SOI wafer. The time to 50% failure of breakdown (T B D ) was shorter when T o x was thicker than 7 nm in contrast to the gate oxide for the bulk silicon wafer.
- Published
- 2003