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CuO fibers were successfully fabricated by a simple electrospinning method, followed by calcination. Some experimental parameters such as the content of Cu(NO 3 ) 2 ∙3H 2 O, the content of PVP, the stirring time, the applied voltage, as well the calcination temperature were investigated, respectively, and their influences on the morphologies of fibers and the spinnability of precursor solution were analyzed. The CuO fibers calcined at 550 °C consisted of numerous CuO grains exhibited a well-crystalline structure. Furthermore, the CuO fibers demonstrated effective photo-Fenton degradation to methyl orange with the assist of H 2 O 2 and the adding volume of H 2 O 2 affects the degradation activities greatly. The degradation rate of methyl orange by the CuO fibers in the presence of 238.8 mmol/L H 2 O 2 is 3.8 times as much as one by P25 alone under the irradiation of Xe lamp. The degradation ratio of methyl orange could achieve 83% in 180 min. The enhanced photocatalytic activities of the CuO fibers were attributed to two aspects: one is the well-crystalline of CuO fibers; the other is that H 2 O 2 accepted the photogenerated electrons and holes effectively, which not only prevented the recombination of charge carriers but also produced additional   OH. In this work, the formation and photocatalysis mechanisms of CuO fibers were also investigated. [ABSTRACT FROM AUTHOR]

Abstract: The abundance of work on SiGe based devices demonstrates the importance of compositional characterization of such materials. However accurate SIMS depth profiling of SiGe, and especially of SiGe/silicon dioxide interfaces can be difficult due to matrix effects. Therefore, we highlight here the improvements brought by the extended Full Spectrum protocol, presented in previous works and allowing minimization of matrix effects. Previous studies on this protocol showed that it was extremely precise and reproducible for Ge and impurity quantification in non oxidized matrices. In this study we thus investigated its accuracy for simultaneous quantitative depth profiling of both matrix elements (Si, Ge, O) and impurities (C) in Si0.82Ge0.16C0.02 layers annealed in oxidizing atmosphere, by comparing results with more classic protocols. The profiles provided by the extended Full Spectrum protocol were found to be more accurate than the others, especially around interfaces. This results in a better comprehension of the behaviour of SiGeC layers under oxidizing anneal and thus allows the fabrication of very well controlled three dimensional Ge nanowire structures for next generation devices. [Copyright &y& Elsevier]

• Cs x WO 3 /g-C 3 N 4 catalyst shows full spectrum CO 2 photoreduction activity. • Improved charge separation efficiency is realized on Cs x WO 3 /g-C 3 N 4 catalyst. • LSPR effect is responsible for the NIR photocatalytic activity. Full spectrum-driven Cs x WO 3 /g-C 3 N 4 catalyst was successfully synthesized by the combination of solvothermal and ultrasonication methods and used in CO 2 photocatalytic reduction. The experimental results suggested that 20 wt% Cs x WO 3 /g-C 3 N 4 catalyst possessed the best yield of CH 4 under NIR and full spectrum light irradiation, which were 1.72 and 6.79 μmol·g−1·h−1, respectively. This outstanding photocatalytic activity could be attributed to the localized surface plasmonic resonance effect and the formation of heterojunction structure, which led to the improved charge separation efficiency, good light-harvesting ability and broadened light response. [ABSTRACT FROM AUTHOR]