22 results on '"Cho, Mann-Ho"'
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2. High performance broadband photodetector in two-dimensional metal dichalcogenides mediated by topologically protected surface state
3. Broadband and ultrafast photodetector based on PtSe2 synthesized on hBN using molecular beam epitaxy
4. Positive charge-mediated phase modulation of MoTe2 synthesized by molecular beam epitaxy
5. Phase change in GeTe/Sb2Te3 superlattices: Formation of the vacancy-ordered metastable cubic structure via Ge migration
6. Spatially inhomogeneous operation of phase-change memory
7. Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy
8. Ultrathin platinum diselenide synthesis controlling initial growth kinetics: Interfacial reaction depending on thickness and substrate
9. Enhancement of photoresponse in Bi2Se3/graphene heterostructures by effective electron–hole separation through internal band bending
10. Modulation of optoelectronic properties of the Bi2Te3 nanowire by controlling the formation of selective surface oxidation
11. Phase-change mechanism and role of each element in Ag-In-Sb-Te: Chemical bond evolution
12. Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement
13. Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor
14. Effect of substrate on photo-induced persistent photoconductivity in InAs nanowires
15. High performance broadband photodetector in two-dimensional metal dichalcogenides mediated by topologically protected surface state
16. Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping
17. Corrigendum to “Spatially inhomogeneous operation of phase-change memory” [Appl. Surf. Sci. 589 (2022) 153026]
18. Structural evolution and defect control of yttrium-doped ZrO2 films grown by a sol–gel method
19. Control of the interfacial reaction in HfO2 on Si-passivated GaAs
20. Characteristics of phase transition and separation in a In–Ge–Sb–Te system
21. Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy
22. Structural evolution and defect control of yttrium-doped ZrO 2 films grown by a sol–gel method
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