1. Direct current magnetron sputtering deposition of InN thin films
- Author
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Cai, Xing-Min, Hao, Yan-Qing, Zhang, Dong-Ping, and Fan, Ping
- Subjects
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NITRIDES , *THIN films , *MAGNETRON sputtering , *SILICON , *GLASS , *SCANNING electron microscopy , *X-ray spectroscopy , *X-ray diffraction , *RAMAN effect - Abstract
Abstract: In this paper, InN thin films were deposited on Si (100) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400nm to 800nm. [Copyright &y& Elsevier]
- Published
- 2009
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