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Abstract: We report the fabrication of one-dimensional (1D) Bi nanowires grown on Ag(111) with average lateral width from 9 to 20nm by physical vapor deposition in ultra high vacuum conditions. In situ low-temperature scanning tunneling microscopy analyses reveal that the preferred growth of 1D Bi nanostructures is driven by the highly anisotropic bonding in the crystallographic structure of the Bi(110) plane. The Bi nanowires grow along direction and align with the directions on Ag(111). The growth of the Bi nanowires proceeds in a bilayer growth mode resulting from the layer pairing in Bi(110) which saturates the dangling bonds and lowers the total energy. [Copyright &y& Elsevier]

Abstract: The adsorption of S2 on the Si(111)-(7×7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(111) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S2 at room temperature results in the passivation of silicon dangling bonds of Si(111)-(7×7) surface. Excessive sulfur forms S n species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu–S bonds. Upon annealing the sample at 300°C, CuS x nanocrystals were produced on the sulfur-terminated Si(111) surface. [Copyright &y& Elsevier]