1. Deposition Ga-doped ZnO films on PEN substrate at room temperature for thin film silicon solar cells
- Author
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Tao, Ke, Sun, Yun, Cai, Hongkun, Zhang, Dexian, Xie, Ke, and Wang, Yuan
- Subjects
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ELECTROFORMING , *GALLIUM , *DOPED semiconductors , *POLYETHYLENE , *ZINC oxide thin films , *CERAMIC materials , *ELECTRIC properties of metals , *MICROSTRUCTURE , *TEMPERATURE effect , *SOLAR cells - Abstract
Abstract: ZnO:Ga thin films were deposited by DC magnetron sputtering using two facing Ga-doped ZnO ceramic targets at room temperature. Polyethylene naphthalate (PEN) and Eagle2000 glass were used as substrates. The influence of PEN and glass substrates on the properties of ZnO:Ga thin films has been investigated. The distance between substrate and plasma dependence of micro-structure and electrical properties was also studied. The lowest resistivity obtained was 6.65×10−4 Ωcm with a Hall mobility of 17.1cm2 V−1 s−1 and a carrier concentration of 5.5×1020 cm−3. When those ZnO:Ga thin films were applied to low-temperature flexible a-Si:H solar cells, an initial conversion efficiency of 5.91% was achieved. [Copyright &y& Elsevier]
- Published
- 2012
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