1. Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator
- Author
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Shangxiong Zhou, Zhiqiang Fang, Honglong Ning, Wei Cai, Zhennan Zhu, Jinglin Wei, Xubing Lu, Weijian Yuan, Rihui Yao, and Junbiao Peng
- Subjects
thin-film transistors ,high dielectric constant ,solution process ,bias stability ,Technology ,Engineering (General). Civil engineering (General) ,TA1-2040 ,Biology (General) ,QH301-705.5 ,Physics ,QC1-999 ,Chemistry ,QD1-999 - Abstract
In this paper, a high-k metal-oxide film (ZrO2) was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). Furthermore, indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs) with high-k ZrO2 dielectric layers were demonstrated, and the electrical performance and bias stability were investigated in detail. By spin-coating 0.3 M precursor six times, a dense ZrO2 film, with smoother surface and fewer defects, was fabricated. The TFT devices with optimal ZrO2 dielectric exhibit a saturation mobility up to 12.7 cm2 V−1 s−1, and an on/off ratio as high as 7.6 × 105. The offset of the threshold voltage was less than 0.6 V under positive and negative bias stress for 3600 s.
- Published
- 2018
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