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Oxygen diffusion coefficients in the metastable ferroelectric phase of polycrystalline hafnium zirconium oxide (HZO) thin films have been quantified using 18O tracers and time-of-flight secondary ion mass spectrometry. 11.5 nm thick HZO films containing 16O were deposited by plasma-enhanced atomic layer deposition followed by post-metallization annealing to crystallize into the ferroelectric phase. A 1.2 nm thick HZO layer containing 18O was then deposited using thermal atomic layer deposition with H218O as a reactant. Thermal anneals were conducted at 300, 350, and 400 °C and the ferroelectric phase confirmed after the anneals by x-ray diffraction, infrared spectroscopy, and electrical property measurements. 18O depth profiles were measured and fit with a thin film diffusion equation to determine the oxygen diffusion coefficients. Oxygen diffusion coefficients ranged from approximately 2 × 10−18 cm2/s at 300 °C to 5 × 10−17 cm2/s at 400 °C with an activation energy of 1.02 ± 0.24 eV. [ABSTRACT FROM AUTHOR]

Bismuth ferrite (BiFeO3) thin films were epitaxially grown on (110)- and (001)-oriented NdGaO3 single crystal orthorhombic substrates by pulsed laser deposition. The films grown on NdGaO3(110) are fully strained and show two ferroelectric variants that arrange in a stripe domain pattern with 71° domain walls, as revealed by piezoresponse force microscopy. We explored their antiferromagnetic textures using scanning nitrogen-vacancy magnetometry. Surprisingly given the large compressive strain state, the films still show a spin cycloid, resulting in a periodic zig-zag magnetic pattern due to the two ferroelastic variants. The films grown on NdGaO3(001) are also fully strained, but the (001) orthorhombic substrate imposes a strongly anisotropic in-plane strain. As a consequence, the ferroelectric polarization exhibits a uniaxial in-plane component, parallel to the b-axis of the substrate. The ferroelectric domain pattern consists of 109° charged domain walls between the two selected ferroelastic variants. This anisotropic strain impacts the magnetic state of BiFeO3 and leads to a simpler spin texture defined by a single propagation vector for the spin cycloid. In both cases, electric-field control of ferroelectric domains tends to favor a transition to a canted antiferromagnetic order. These results reveal that the cycloidal structure of BiFeO3 can undergo large compressive strain and open further electrical means to tune the magnetic state of this room-temperature multiferroic compound. [ABSTRACT FROM AUTHOR]

This paper presents a numerical analysis, using the rigorous-coupled-wave-analysis method, of microwave and far-IR radiation scattering on thin conductive films of nanometer thickness under the condition of total internal reflection. Transmittance, reflection, and absorption studies have shown the possibility of overcoming the 50% absorption limit with frequency-independent behavior; the absorption above the critical angle reaches values greater than 90%. In addition, the influence of such thin metal-dielectric structure on the Goos–Hänchen shift is considered. At maximum absorption, calculations showed its absence in both TE and TM polarizations. The numerical analysis was carried out for a plane wave and for a 500 cm diameter beam. [ABSTRACT FROM AUTHOR]

The effect of oxygen on the electrical conductance and local structural properties of BiFeO3 (BFO) thin films on SiO2/Si substrates grown by RF magnetron sputtering was investigated. The conductivities of BFO were studied in a planar electrode with blue light irradiation. The BFO films grown with oxygen (BFO-O2) show a large conductivity increase, which is 12.66 times more than the BFO grown without oxygen (BFO), and the conductivity change is entirely caused by the BFO thin films. To explain the mechanism of increased electrical conductance, the local structure at the Fe K-edge was investigated by using time-resolved x-ray absorption spectroscopy (TRXAS). The applied voltage and blue light exposure affected the Fe–O bond, while the valence states of Fe atoms in BFO thin films remained unchanged. When the BFO films were irradiated, the bonding distance of the Fe–O bond was deviated, resulting in an oxygen vacancy. These findings imply that BFO thin films with more oxygen components exhibit higher electrical conductivity when exposed to blue light. The results of this research should pave the way for optoelectronic applications to modulate the electrical conductivity driven by oxygen and blue light. [ABSTRACT FROM AUTHOR]

Sb2S3 has attracted tremendous attention for sustainable thin film photovoltaics in recent years due to its excellent structural and optoelectronic properties. To employ this quasi-1D material for solar cells, the orientation control of Sb2S3 films is very important. In this Letter, we employ the scalable close-spaced sublimation (CSS) method to deposit favorable [hkl, l ≠ 0]-orientated and compact Sb2S3 films for efficient and stable solar cells. The insights into the growth mechanisms of Sb2S3 films are provided. The deposition rate is one of the key parameters in controlling the film orientation and morphology. Based on the desired film properties, which afford efficient charge transport and suppressed carrier recombination, the best-performing planar Sb2S3 solar cell yields an impressive power conversion efficiency of 4.09% without any modification strategies, which is the highest value for CSS-deposited Sb2S3 system. Moreover, the excellent indoor performance of 11.26% under 1000 lux light-emitting-diode illumination for Sb2S3 devices demonstrates the great potential of using Sb2S3 indoor photovoltaics to power the Internet of Things electronics. [ABSTRACT FROM AUTHOR]

Chalcogenide semiconductors have emerged as promising candidates for optoelectronic applications due to their unique properties, including low toxicity, fabrication cost, superior stability, and decent charge transport properties. In particular, Bi-based chalcogenides, e.g., AgBiS2 and Bi2S3, have been extensively studied for photovoltaic and photodetection applications. AgBiS2 exhibits relatively high photoconversion efficiency but large dark current. On the other hand, Bi2S3 possesses relatively low dark current but limited charge transport. In this study, we introduce zinc ion within the Bi2S3 precursor and fabricate phase-pure ZnBi2S4 semiconductor, which showed improved optoelectronic properties. The fundamental properties of ZnBi2S4 are fully characterized, and we also demonstrated photodiodes with excellent device performance, suggesting great potential for photodetection. [ABSTRACT FROM AUTHOR]

In this article, we propose and demonstrate a thin film-sputtered PZT as a base for the development of Si photonic devices such as waveguides, MZI, and electro-optic modulators. We report the optimization of PZT on MgO (002) substrate to obtain a highly oriented PZT film (100) with a surface roughness of 2 nm. Si gratings are simulated for TE mode with an efficiency of −2.2 dB/coupler. The enhancement in the simulated overlap coefficient of 200% is observed in Si-on-PZT compared to the conventional PZT-on-SOI architecture. The fabricated Si gratings on PZT show a coupling efficiency of −10 dB/coupler and a 1 dB bandwidth of 14 nm for a TE Gaussian source. The DC electro-optic characterization for MZI (Si-on-PZT) shows a spectrum shift of 71 pm/V in the C-band compared to 14 pm/V obtained for PZT-on-SOI. The enhancement of 400% in experimental response is attributed to the improved electro-optic overlap as well as PZT film quality. Our proposed design can potentially be used for programmable photonic integrated circuits using an electronically tunable PZT thin film as well as in neural networks. [ABSTRACT FROM AUTHOR]

Plasmonic antennas with helical geometry can convert linearly polarized dipole radiation into purely circularly polarized far-fields, and vice versa. Besides large Purcell enhancements, they possess a wide tunability due to the geometry dependence of their resonant modes. Here, the coupling of a dipole emitter embedded in a thin film to plasmonic single and double helices is numerically studied. Using a higher-order finite element method (FEM), the wavelength dependent Purcell enhancement of a dipole with different positions and orientations is calculated and the far-fields with respect to their chirality and radiation patterns are analyzed. Both single and double helices demonstrate highly directional and circularly polarized far-fields for resonant excitation but with significantly improved directional radiation for the case of double helices. [ABSTRACT FROM AUTHOR]

The realization of room-temperature ferromagnetism in ferroelectric thin films based on HfO2 is a crucial step in broadening the applicability of HfO2-based materials and advancing their utility in spintronics devices. Nevertheless, the substitution of magnetic ions may lead to a reduction in resistivity, posing a challenge to the maintenance of ferroelectricity. Additionally, the resulting dilute magnetic semiconductors often exhibit relatively insignificant magnetic properties. In this study, we achieved substantial room-temperature ferromagnetism and anisotropic magnetism in epitaxial thin films of yttrium-doped HfO2 (HYO) on (111)-oriented yttrium-stabilized zirconia substrates. Remarkably, room-temperature ferromagnetism was observed in the as-grown HYO thin films, and its magnitude was significantly amplified through an annealing process. Simultaneously, the anisotropic magnetization behavior in the HYO film could be modulated by adjusting the film thickness and employing different temperature annealing procedures. The variations in anisotropic magnetization and ferromagnetism were attributed to changes in the concentration of oxygen vacancies, which were influenced by both film thickness and annealing conditions. These findings suggest that the manipulation of thickness and defects can effectively control the anisotropic ferromagnetic properties of epitaxial HYO thin films, thereby holding promise for the integration of metal-oxide semiconductors with spintronics. [ABSTRACT FROM AUTHOR]

The preparation of high-quality graphite-like phase carbon nitride (g-C3N4) films is challenging, which limits the potential optoelectronic and photocatalytic applications. Here, we report the growth of crystalline g-C3N4 films with thicknesses of approximately 100–200 nm on the indium tin oxide substrates by chemical vapor deposition. The films show high crystalline quality and uniformity as suggested by the appearance of interference fringes in the transmission spectra and the existence of exciton peak. The optimized growth conditions for high-quality g-C3N4 films deposition have been obtained through combined optical characterizations and detailed electronic structure analyses using x-ray spectroscopies. The as-grown g-C3N4 films exhibit a bandgap value of 3.05 eV as well as an enhanced fluorescence lifetime of ∼12.43 ns. By adding thiourea to the melamine precursors, N vacancies have been formed in the main heptazine structure, achieving the modulation of the bandgap and the promoted carrier separation. This work provides guidelines for understanding the property–structure relationships during g-C3N4 film deposition. The deposition of high crystallinity g-C3N4 films therein further extends the applications in the fields of optoelectronic and photocatalytic devices. [ABSTRACT FROM AUTHOR]

A single Sb phase demonstrates potential for use in phase change memory devices. However, the rapid crystallization of Sb at room temperature imposes limitations on its practical application. To overcome this issue, Sb is alloyed with Se using a reactive co-sputtering deposition technique, employing both Sb and Sb2Se3 sputter targets. This process results in the formation of Sb-rich Se thin films with varying compositions. Compared to pure Sb, the Sb-rich Se thin films exhibit enhanced thermal stability due to the formation of Sb–Se bonds and reduced resistance drift. In particular, the Sb86.6Se13.4 thin film demonstrates an exceptionally low resistance drift coefficient (0.004), a high crystallization temperature (Tc = 195 °C), a high 10-year data retention temperature (116.3 °C), and a large crystallization activation energy (3.29 eV). Microstructural analysis of the Sb86.6Se13.4 reveals the formation of a trigonal Sb phase with (012) texture at 250 °C, while Sb18Se and Sb2Se3 phases form at 300 °C. Conversely, the Sb98.3Se1.7 thin film shows the formation of the single Sb phase with (001) texture, a Tc of 145 °C, and a low resistance drift coefficient (0.011). Overall, this study demonstrates that the alloying strategy is a viable approach for enhancing thermal stability and reducing resistance drift in Sb-based phase-change materials. [ABSTRACT FROM AUTHOR]

In this work, the epitaxial 0.85BaTiO3-0.15Bi(Mg1/2Ti1/2)O3 (BT-BMT) films with large compressive strain were fabricated on SrTiO3 (001). The expansion of the unit cell volume and out-of-plane lattice parameter and the large built-in electric field (Ebi) in BT-BMT films indicate the existence of defect dipoles. It was found that the polarization and the breakdown strength can be optimized by the strain and the defects, respectively. Ultimately, a desirable energy density of 90.3 J/cm3 with efficiency of 62.3% was achieved. It suggests that strain can serve as a practical means to modulate the energy storage performance of ferroelectric epitaxial film capacitors. [ABSTRACT FROM AUTHOR]

Topological polar structures are attracting attention as potential applications of next-generation high-density memories. We investigate how the ferroelectric domain evolves with film thickness in c-axis oriented epitaxial Bi2WO6 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates. In addition to the general thickness scaling effect on domain size, we find that 3- or 4-variant domains appear in a sample thicker than 120 nm, whereas ⟨100⟩-type domains compete with the ⟨110⟩ ones in thinner samples, resulting in a variety of nontrivial topological structures. By visualizing the spatial distribution of electric polarizations through angle-resolved piezoresponse force microscopy, we provide direct evidence for the spontaneous emergence of nontrivial topological polar structures. These results provide useful insights into the domain behavior of layered ferroelectric thin films. [ABSTRACT FROM AUTHOR]

A promising way to store quantum information is by encoding it in the bosonic excitations of microwave resonators. This provides for long coherence times, low dephasing rates, as well as a hardware-efficient approach to quantum error correction. There are two main methods used to make superconducting microwave resonators: by traditionally machining them out of bulk material and by lithographically fabricating them on a chip in thin film. 3D resonators have few loss channels and larger mode volumes, and therefore smaller participations in the lossy parts, but it can be challenging to achieve high material quality. On-chip resonators can use low-loss thin films, but they confine the field more tightly, resulting in higher participations and additional loss channels from the dielectric substrate. In this work, we present a design in which a dielectric scaffold supports a thin-film conductor within a 3D package, thus combining the low surface participations of bulk-machined cavities with high quality and control over materials of thin-film circuits. By incorporating a separate chip containing a transmon qubit, we realize a quantum memory and measure single-photon lifetimes in excess of a millisecond. This hybrid 3D architecture has several advantages for scaling as it relaxes the importance of the package and permits modular construction with separately replaceable qubit and resonator devices. [ABSTRACT FROM AUTHOR]

Recently, the observation of ferroelectric vortex arrays has triggered the investigation of topological domain structures and their characteristics. Vortices are typical topological domain structures with chirality in nanoscale ferroelectric materials. The chirality of a single vortex in a nanodot can be easily manipulated, but the collective control of a vortex array is exceptionally difficult and has not yet been realized. This Letter proposes an effective scheme for the collective control of a vortex array and investigates it via phase-field simulations. The results indicate that the collective control of a vortex array with bidirectional switching can be realized by introducing a bending film with periodic large curvatures under alternative electric fields. Furthermore, a general rule for determining the electrically controllable chirality of ferroelectric vortices is proposed. This Letter demonstrates the feasibility of the collective control of vortex arrays and provides insights for developing ferroelectric nanoelectronic devices based on vortex arrays. [ABSTRACT FROM AUTHOR]

Heterostructure, which combines robust ferroelectrics and narrow-bandgap semiconductors together, is promising for acquiring both intensive photocurrent and large photovoltage output in photovoltaics; therefore, manipulation of the properties by engineering heterostructure has driven significant research activity. Herein, well-known Aurivillius-type ferroelectric Bi2WO6 and mullite-type Bi2Fe4O9 are chosen, and an excellent platform to investigate the role of ferroelectric-semiconductor heterostructure in tuning the photovoltaic effect is constructed by in situ depositing p-type nanoscale Bi2Fe4O9 onto n-type Bi2WO6 nanonet matrix. The nanonet-supported two-dimensional planar-like heterostructure and its ferroelectric domain switchability are confirmed by atomic force microscopy techniques. Significantly, the desired Bi2WO6/Bi2Fe4O9 film optimizes the key steps from light to electricity, and exhibits a large and stable photovoltaic effect, achieving four/three orders of magnitude enhancement of short-circuit photocurrent density/open-circuit voltage under laser irradiation. Furthermore, electric-field-controlled switchable asymmetric photoresponse and device stability were clearly observed, due to, in particular, Bi2WO6/Bi2Fe4O9 interfacial Schottky barrier formation and its modulation by poling-modified ferroelectric polarization. These findings highlight an important insight to construct diversified heterostructures with multi-functioning performances. [ABSTRACT FROM AUTHOR]

Magnetic skyrmions in thin films with perpendicular magnetic anisotropy are promising candidates for magnetic memory and logic devices, making the development of ways to transport skyrmions efficiently in a desired trajectory of significant interest. Here, we investigate the transport of skyrmions by surface acoustic waves (SAWs) via several modalities using micromagnetic simulations. We show skyrmion pinning sites created by standing SAWs at anti-nodes and skyrmion Hall-like motion without pinning driven by traveling SAWs. We also show how orthogonal SAWs formed by combining a longitudinal traveling SAW and a transverse standing SAW can be used for the 2D positioning of skyrmions. Our results also suggest SAWs offer a viable approach to the transport of multiple skyrmions along a multichannel racetrack. [ABSTRACT FROM AUTHOR]

The d5 electron configurations under the crystal field, spin–orbit coupling, and Coulomb interaction give rise to a plethora of profound ground states. Ruthenium perovskite oxides exhibit a number of unconventional properties yet the Ru4+ state (4 d 4 ) is usually stable in these materials. In this regard, Ru3+ ions in perovskite materials are expected to be a mesmerizing playground of 4 d 5 electron configurations. Here, we report measurements of x-ray photoemission spectroscopy on recently synthesized perovskite ruthenium oxide thin films, LaRuO3 and NdRuO3, whose valence state of the ruthenium ions is trivalent. We discuss correlation and spin–orbit effects from the valence band spectra, in particular an additional peak structure around 3–5 eV, reminiscent of the so-called 3 eV peak observed in Sr2RuO4. Moreover, we find that the core-level spectra of these materials are quantitatively different from those in other ruthenates, which possess Ru4+ ions, e.g., SrRuO3. We therefore argue that the core level spectra of LaRuO3 and NdRuO3 are peculiar to the Ru3+ states. [ABSTRACT FROM AUTHOR]

FeSb2 is known as a potential low-temperature thermoelectric material with the record-high power factor (PF) originating from the huge phonon drag thermopower (Sg). However, the Sg contribution to PF has been observed only at very low temperatures (T) < 40 K. In this paper, we found that the Sg persists at much higher T up to 240 K and enhances PF in FeSb2 thin films deposited on SrTiO3 single crystals. The FeSb2 films showed phonon drag Sg peak at T ∼ 60 K, and the Sg peak value was largely enhanced from 56 to 208 μV/K by varying film thicknesses from 10 to 100 nm. Due to thickness-dependent Sg contribution, the maximum PF = 31.3 μW/(cm K2) was obtained for a 37-nm thick film. In addition, the onset temperature, where Sg starts to appear, can be largely increased due presumably to the enhanced electron–phonon interaction by phonon leakage from the SrTiO3 substrate to the thin FeSb2 layer. Heterostructuring with an oxide would be an effective approach to enhance the phonon drag effect to increase PF in higher T regions for future thermoelectric cooling and energy conversion devices. [ABSTRACT FROM AUTHOR]

Hf0.5Zr0.5O2 (HZO) thin films are promising for applications in ferroelectric memories. However, these materials often face challenges, such as polarization fluctuations (e.g., fatigue and wake-up) and electric break-down incidents during the "1/0" write/read cycles, hindering their industrial application. Herein, fatigue, wake-up, and electric break-down seriously depend on both the electric field for polarization switching (Es) and the charge accumulation in the HZO film. More and more charges pin ferroelectric domains, and the sub-switching polarization introduces serious ferroelectric fatigue during the 1010 write/read cycles at Es ∼ 1.2Ec, where Ec is a ferroelectric coercive field. On the contrary, new charges increase rather slowly, and complete polarization switching is realized during the 1010 cycles at Es ∼ 1.5Ec, so the HZO film presents excellent polarization stability. A high Es ∼ 2Ec introduces the strong wake-up effect first; however, the serious charge accumulation largely increases leakage current and quickly introduces an electric break-down of the HZO film. Furthermore, it was found that the leakage current and dielectric permittivity can effectively monitor the charge accumulation and provide an early warning for fatigue and electric break-down. [ABSTRACT FROM AUTHOR]

We report the fabrication and testing of arrays of nanoscale superconducting quantum interference devices (SQUIDs) directly written into a thin film of the high-transition temperature superconductor YBa2Cu-3O7−δ with a focused helium ion beam. We compare three array configurations with 400 nm by 400 nm nanoSQUIDs connected in series and parallel and a two-dimensional (2D) combination of both. Our electrical transport measurements show that series arrays of three nanoSQUIDs exhibit modulation voltages greater than 1 mV and that combining the devices in parallel greatly enhances the slope of the voltage–magnetic field characteristic. A 2D array with 3 SQUIDS in series and 7 in parallel exhibited a transfer function of 5.51 mV/mT. [ABSTRACT FROM AUTHOR]

Incorporating nano-dispersions into thermoelectric (TE) materials is an effective approach to enhance the TE properties. Herein, the TE performance of Cu2Se thin film is significantly enhanced by incorporating highly dispersed SnSe nano-inclusions. The high power factor (PF, ∼11.0 μW cm−1 K−2, 310 K) at near room temperature is achieved mainly due to the enhanced energy filtering effect that originated from the potential barrier difference. The total thermal conductivity is decreased owing to the simultaneously reduced electrical conductivity and enhanced phonon scattering. As a result, a high zT value (∼0.59 at 375 K) is achieved, which is about 12 times of pristine Cu2Se film. Remarkably, the calculated average zT values of Cu2Se/SnSe films from 310 to 375 K greatly exceed those of the pristine Cu2Se film, as well as the most state-of-the-art studies. High room-temperature PF and average zT value are crucial for expanding the practical application of Cu2Se at near room temperature. This work provides a feasible strategy to optimize the zT values of some other TE films by introducing nano-dispersions. [ABSTRACT FROM AUTHOR]

This work explores the infrared (IR) detection capabilities of 750 nm thick Z-cut lithium niobate (LN) thin film resonator at asymmetric modes of various orders: the first, third, fifth, and seventh order asymmetric (A1, A3, A5, and A7), with resonant frequencies of 2.35, 6.68, 11.09, and 15.49 GHz. Under the infrared radiation of 0.575 mW, the responses about admittance minima and frequency drift corresponding to these modes have been experimentally validated. Notably, the A1 mode exhibits the most significant admittance dip response with 2.62 dB, while the A7 mode demonstrates a maximum frequency drift response of 670 kHz. The optimal parameter for noise equivalent power reaches 15.41 pW/Hz1/2, and the optimal detectivity achieves 7.40 × 106 m Hz1/2/W. These findings indicate the immense potential of LN thin-film resonators for infrared sensing applications. [ABSTRACT FROM AUTHOR]

Driven by the increasing demand for 5G communication, GaN radio frequency (RF) device on Si technology has been flourishing attributable to the large size, low cost, and compatibility with complementary metal–oxide–semiconductor technology. However, a significant challenge is that a high-conductance parasitic channel forms at the interface between the III-N epitaxial layers and the Si substrate, leading to severe RF loss, which has been considerably impairing both the performance and advancement of RF GaN-on-Si technologies. Despite continuing controversies concerning the physical mechanisms engendering the parasitic channel, clarification is critically needed. Standing apart from traditional studies on RF loss in III-N epilayers grown on Si, this article comprehensively investigates the bonding interface of GaN thin film and Si(100) substrate realized via direct surface activated bonding and ion-cutting technologies. It was clearly determined that substantial diffusion of gallium (Ga) atoms into the Si substrate at the bonding interface occurred even at an annealing temperature as low as 350 °C. Subsequent high-temperature post-annealing at 800 °C intensified this diffusion, activating Ga atoms to form a p-type highly conductive parasitic channel. Simultaneously, it triggered Ga atoms aggregation and incited melt-back etching within the Si substrate at the interface. Contrasting with the conventional hetero-epitaxy, this study presents a compelling view based on the bonding technique. It conclusively elucidates the physical mechanisms of the formation of the primary source of RF loss—the p-type highly conductive parasitic channel. [ABSTRACT FROM AUTHOR]

The perovskite oxides ReNiO3 (Re = rare-earth elements) are promising functional materials due to their strongly correlated electrons. Except for the well-known intrinsic metal-insulating transition in these materials, recent progresses have proved that protonation of ReNiO3 can bring about interesting Mott transition in this series. To date, in these protonated species (H-ReNiO3), huge resistance switching, fast ionic diffusion, and their applications as an iontronic transistor, memristor, and fuel cell are reported. In this work, the thermal conductivities of H-ReNiO3 (Re = La, Nd, Sm, and Eu) epitaxial thin films are investigated. The protonation-induced Mott transition can effectively modulate the electronic thermal conductivity while the lattice thermal conductance is less affected. Hence, at room temperature, the metallic LaNiO3 and NdNiO3 exhibit reversible wide thermal conductivity modulation, in ranges of 2.6–12.0 and 1.6–8.0 W m−1 K−1, respectively. These values are much larger than other thermal regulation materials based on transition metal oxides. Thus, our work reveals the great potential of ReNiO3 being applied as a thermal-regulating material. The fast ionic diffusion in H-ReNiO3 also guarantees that a fast response and wide-range thermal transistor can be realized by H-LaNiO3 and H-NdNiO3 in the future. [ABSTRACT FROM AUTHOR]

The manifestation of giant persistent photoconductivity (GPPC) is demonstrated with a fs (femtosecond) Ti:sapphire laser pulse that has a duration of 40 fs and a central wavelength of 400 nm. The femtosecond laser pulse was irradiated on a two-terminal VO2 device fabricated on a corning glass substrate. Under the applied voltages of 9–12 V, the GPPC takes place within 8.6–15 μs after the laser irradiation. The photocurrent from the GPPC in the VO2 device remains stable with the current decreasing slope of ∼0.003%/minute. With one-dimensional thermal model, the temperature (TIR) of the irradiated area is estimated as a function of time, indicating that TIR is above the insulation-to-metal transition temperature of VO2 thin film prior to the onset of GPPC. The ultrafast onset of GPPC of VO2 device can be utilized for ultrafast optoelectronic switch and memory device. [ABSTRACT FROM AUTHOR]

Wurtzite-type aluminum nitride (AlN) thin films exhibiting high thermal conductivity, large grain size, and low surface roughness are desired for both bulk acoustic wave and surface acoustic wave resonators. In this work, we use ammonia (NH3) assisted reactive sputter deposition of AlN to significantly improve these properties. The study shows a systematic change in the structural, thermal, and morphological properties of AlN grown in nitrogen (N2) and N2 + NH3 atmosphere. The study demonstrates that NH3 assisted AlN sputtering facilitates 2D growth. In addition, the study presents a growth model relating the 2D growth to improve the mobility of aluminum (Al) and nitrogen (N) ad-atoms in NH3 atmosphere. Consequently, the thermal conductivity and roughness improve by ≈ 76%, and ≈ 35%, while the grain size increases by ≈ 78%. [ABSTRACT FROM AUTHOR]

Achieving simultaneous control over multiple functional properties, such as magnetic anisotropy, magnetoresistance, and metal-insulator transition, with atomic precision remains a major challenge for realizing advanced spintronic functionalities. Here, we demonstrate a unique approach to cooperatively tune these multiple functional properties in highly strained La0.7Sr0.3MnO3 (LSMO) thin films. By inserting varying perovskite buffer layers, compressively strained LSMO films transition from a ferromagnetic insulator with out-of-plane magnetic anisotropy to a metallic state with in-plane anisotropy. Remarkably, atomic-scale control of the buffer layer thickness enables precise tuning of this magnetic and electronic phase transformation. We achieve a colossal magnetoresistance tuning of 10,000% and an exceptionally sharp transition from out-of-plane to in-plane magnetic anisotropy within just a few atomic layers. These results demonstrate an unprecedented level of control over multiple functional properties, paving the way for the rational design of multifunctional oxide spintronic devices. [ABSTRACT FROM AUTHOR]

Control of phonon transport in solid devices is important for thermoelectric energy conversion and phononic crystal technology, and much attention has been paid to sub-micrometer or nanometer scale structures for that purpose. In order to investigate how various nano-structures affect the phonon transport, we have developed a numerical simulation code based on the Boltzmann transport equation of phonon distribution function in the reciprocal space. To appropriately treat the phonon transport at interface of an arbitrary shape, we newly introduced a volume of fluid like scheme, which was originally developed for multi-phase flow simulation. As a test of the developed simulation code, we investigated two-dimensional thin silicon films with two types of hole shape and two types of hole arrangement. The results essentially agree with recent experiments. [ABSTRACT FROM AUTHOR]

The movement of heat through amorphous solids on an atomic level remains an outstanding question. Recent studies suggest that the primary thermal carrier in amorphous materials, propagons, essentially behaves like phonons. In this work, we provide experimental evidence that shows the interaction between propagons and phonons by utilizing the phase change chalcogenide germanium telluride. A series of ultra-long time-delay time-domain thermoreflectance measurements are used to analyze the scattering of vibrational thermal carriers at the boundaries of amorphous GeTe thin films relative to scattering across a crystalline-amorphous bilayer. We find that amorphous long wavelength propagons that would otherwise scatter can instead be hosted by a crystalline underlayer and its phonon population. This experimental evidence directly demonstrates propagon–phonon interactions in a clear experimental manner. [ABSTRACT FROM AUTHOR]

The prototype high-entropy oxide (HEO) Y0.2La0.2Ce0.2Pr0.2Sm0.2O2−δ represents a particularly complex class of HEOs with significant anion sublattice entropy. The system takes either a fluorite or bixbyite-type crystal structure, depending on synthesis kinetics and thermal history. Here, we synthesize bulk ceramics and epitaxial thin films of Y0.2La0.2Ce0.2Pr0.2Sm0.2O2−δ and use diffraction to explore crystal symmetry and phase. Thin films exhibit the high symmetry fluorite phase, while bulk ceramics adopt the lower symmetry bixbyite phase. The difference in chemical ordering and observed symmetry between vapor-deposited and reactively sintered specimens suggests that synthesis kinetics can influence accessible local atomic configurations, i.e., the high kinetic energy adatoms quench in a higher-effective temperature, and thus higher symmetry structure with more configurational entropy. More generally, this demonstration shows that recovered HEO specimens can exhibit appreciably different local configurations depending on synthesis kinetics, with potential ramifications on macroscopic physical properties. [ABSTRACT FROM AUTHOR]

Compositionally complex oxides (CCOs) are an emerging class of materials encompassing high entropy and entropy stabilized oxides. These promising advanced materials leverage tunable chemical bond structure, lattice distortion, and chemical disorder for unprecedented properties. Grain boundary (GB) and point defect segregation to GBs are relatively understudied in CCOs even though they can govern macroscopic material properties. For example, GB segregation can govern local chemical (dis)order and point defect distribution, playing a critical role in electrochemical reaction kinetics, and charge and mass transport in solid electrolytes. However, compared with conventional oxides, GBs in multi-cation CCO systems are expected to exhibit more complex segregation phenomena and, thus, prove more difficult to tune through GB design strategies. Here, GB segregation was studied in a model perovskite CCO LaFe0.7Ni0.1Co0.1Cu0.05Pd0.05O3−x textured thin film by (sub-)atomic-resolution scanning transmission electron microscopy imaging and spectroscopy. It is found that GB segregation is correlated with cation reducibility—predicted by an Ellingham diagram—as Pd and Cu segregate to GBs rich in oxygen vacancies ( V O · · ). Furthermore, Pd and Cu segregation is highly sensitive to the concentration and spatial distribution of V O · · along the GB plane, as well as fluctuations in atomic structure and elastic strain induced by GB local disorder, such as dislocations. This work offers a perspective of controlling segregation concentration of CCO cations to GBs by tuning reducibility of CCO cations and oxygen deficiency, which is expected to guide GB design in CCOs. [ABSTRACT FROM AUTHOR]

As a promising thermoelectric material, CuS has attracted significant attention due to its high conductivity, abundance of elements, and eco-friendliness. However, the study on CuS-based thermoelectric thin films is still lacking, impeding the advancement of CuS-based thermoelectric devices. Herein, high-quality CuS thin films have been fabricated through a facile vulcanization process. The effects of vulcanization temperature and film thickness on the thermoelectric properties of CuS thin films have been investigated. An optimal high power factor of 73.25 μW/m−1 K−2 is found at 400 K for a 20 nm-thick sample, and the optical transmittance is over 80% in the visible light spectrum. Meanwhile, excellent flexibility of the CuS thin films has been demonstrated. These results demonstrate the high promise of CuS thin films for transparent and flexible thermoelectric device applications. [ABSTRACT FROM AUTHOR]

We demonstrate zero-bias mid-infrared photocurrent generation in topological insulator MnBi2Te4 thin films. The symmetry breakings at the surface and interfaces lead to the coexistence of Dirac and Rashba band states, which enable two kinds of photogalvanic responses. One is the magneto-photogalvanic effect in the presence of an external in-plane magnetic field perpendicular to photocurrent direction, and the other is the light-polarization-dependent linear photogalvanic effect arising from in-plane symmetry breakings, both observed up to room temperature. We disentangle these contributions by light-polarization and temperature dependent spectroscopy under the varying magnetic field. [ABSTRACT FROM AUTHOR]

Permalloy (Py) films are commonly regarded as soft magnetic materials, wherein the magnetization aligns within the film plane. Our studies reveal the presence of perpendicular magnetic anisotropy in Py thin films deposited on the collinear antiferromagnetic RuO2(101) surface. By employing both the magneto-optical Kerr effect and the anomalous Hall effect, we identified the interfacial origin of the observed perpendicular anisotropy, quantifying it with an interfacial anisotropy energy of approximately 0.77 erg/cm2. Current-induced magnetization switching in Py/RuO2(101) has been achieved under an in-plane field, with the current applied along both [010] and [10 1 ¯ ] directions. Py films exhibiting perpendicular magnetic anisotropy offer an innovative material platform for investigating the spin–orbit effect, holding significant potential for spintronics applications. [ABSTRACT FROM AUTHOR]

This Letter introduces an on-chip topological phononic crystal (PnC) acoustic waveguide employing lithium niobate thin films. Utilizing a C 3 v symmetry-breaking mechanism, the topological PnC acoustic waveguide is achieved, operating at frequencies exceeding 430 MHz. A SH0 mode acoustic transceiver is designed, enabling highly efficient on-chip acoustic wave transmission and reception. The fabricated topological PnC waveguide demonstrates a propagation loss of 11.3 dB/mm at the edge mode. An acoustic beam splitter utilizing topological edge mode has been demonstrated, showing the configurability of the topological PnC acoustic waveguide. These results offer significant promise for advancing the development of hybrid phononic circuits tailored for high-frequency acoustic information processing, sensing, and manipulation. [ABSTRACT FROM AUTHOR]

In recent years, the lead-free double perovskite Cs2AgBiBr6 has emerged as an appealing alternative to lead-based perovskites due to its nontoxicity and long-term stability. In this study, we employed methyl acetate as an antisolvent and prepared high-quality Cs2AgBiBr6 films by a facile one-step spin-coating method. The prepared films exhibited excellent crystallinity with densely packed crystal grains. The root mean square roughness and average roughness of the obtained Cs2AgBiBr6 perovskite films were 6.69 and 5.43 nm, respectively. Furthermore, the memory device based on the Cs2AgBiBr6 perovskite films exhibited uniform and repeatable bipolar resistive switching performance with an ON/OFF ratio of 15, an endurance of 80 cycles, and a retention time of 104 s. This work showcases a simple and convenient one-step spin-coating method for depositing high-quality Cs2AgBiBr6 thin films while highlighting their potential application in resistive switching memories based on lead-free double perovskites. [ABSTRACT FROM AUTHOR]

Spin-based technologies demand the effective excitation and control of high-frequency spin waves in order to increase the operational speed of magnonic logic circuits. An available option for the high-frequency spin wave is the perpendicular standing spin waves (PSSWs) in ferromagnetic thin films. However, the practical utilization of a PSSW is still challenging due to a few unsolved critical issues such as its relatively low amplitude and simultaneous excitation of other PSSW modes. Here, efficient excitation and control of a first-order PSSW mode are demonstrated in Ni80Fe20 thin films using a double-laser-pulse scheme. Based upon our experimental and theoretical investigations, it is found that the precession amplitudes of the Kittel and PSSW modes show strong dependence on equivalent torques (i.e., the averaged torques during fast relaxation process after the second pulse excitation) applied to these two modes. Thus, selective excitation and amplification of the first-order PSSW mode can be realized by manipulating the equivalent torque, i.e., introducing a second laser pulse with an appropriate arrival time and laser fluence. Moreover, the spectral tuning of this single PSSW mode can be achieved by proportionately adjusting the laser fluence of two pump pulses. These findings may pave the way for the realization and construction of future high-performance spintronic devices. [ABSTRACT FROM AUTHOR]

In this study, the effects of stress relaxation on the thermoelectric properties (carrier concentration n, Hall mobility μH, weighted mobility μW, density-of-state mass md*, Seebeck coefficient S, and thermopower factor PF) of undoped ZnO films were rationalized in terms of native defects (VO-related defects and Zni-related donors) induced through the deposition temperature (TD) during the sputtering process. All investigated ZnO films exhibited compressive stress and tended to become less compressive with increasing TD. The stress relaxation at high TD resulted in improved film crystallization and decreased native defect concentration, thus significantly enhancing md* through the reduction of intrinsic lattice defects, while less carriers were trapped and scattered by defects. Therefore, n and μ increased simultaneously (by 28 times and one order of magnitude, respectively), markedly enhancing the PF of dopant-free ZnO films. [ABSTRACT FROM AUTHOR]

Surface mounted thin film thermoelectric (TE) devices for localized cooling, power generation, and sensing are topics of immense current interest. Here, we establish the superior TE performance of thin film junctions made of topological insulators (TIs) Bi85Sb15 (BiSb) and Sb2Te3 by comparing their performance with those of Bi2Te3 and Sb2Te3. Thin films of these TIs were first evaluated for their carrier concentration, Hall mobility, resistivity, and thermopower. The Seebeck coefficient of BiSb, Sb2Te3, and Bi2Te3 measured against copper at ambient temperature is −100, +160, and −70 (±10) μV/K, while their power factors are 0.5, 0.5, and 0.45 (±0.05) 10−3 W m−1 K−2, respectively. Single TE junctions of BiSb–Sb2Te3 and Bi2Te3–Sb2Te3 yield a response of 272 and 240 (±10) μV/K, respectively. This comparative study shows that BiSb is a superior n-type counter electrode for Sb2Te3 compared to the n-type Bi2Te3. Moreover, Bi2Te3 is prone to tellurium antisite disorder, which affects its TE properties significantly. [ABSTRACT FROM AUTHOR]

Interplay between oxygen vacancies and the stabilization of the ferroelectric orthorhombic phase in doped HfO2, as well as the resulting impact on endurance and retention, is far from being well understood. In Hf0.5Zr0.5O2 (HZO) thin films, it is commonly found that high polarization occurs usually at the the expense of robustness upon cycling due to the polarization–endurance dilemma. It has been reported that HZO thin films grown by pulsed laser deposition under the mixed Ar and O2 atmosphere exhibit a high polarization. Here, we show that this strategy enables functional properties tuning, allowing to obtain HZO films with high polarization at low oxidation conditions without degradation of endurance and retention. [ABSTRACT FROM AUTHOR]

This report demonstrates Al0.93B0.7N thin films grown epitaxially on n-type GaN (0002)/c-plane sapphire substrates by reactive magnetron sputtering at 300 °C. At 200 nm film thickness, the Al0.93B0.07N layers exhibit partially relaxed substrate-induced epitaxial strain, a 0.16° wide (0002) rocking curve, in-plane crystallographic registry, and sub-nanometer surface roughness. Electrically, the stack shows robust hysteresis over three frequency decades, a remanent polarization of ∼125 μC/cm2, a strongly frequency dependent coercive field, highly uniform dc leakage currents, and endurance >106 field cycles. This report validates possibilities for ferroelectric nitride integration into conventional III-nitride heterostructures with high crystalline fidelity, high electrical resistivity, and persistent hysteresis. Such materials are synthesizable at thermal budgets and temperatures compatible with back-end-of-the-line boundary conditions. [ABSTRACT FROM AUTHOR]

The photonic crystal waveguide (PCW) possesses remarkable capabilities in manipulating light beams and light–matter interactions within the subwavelength range. This property renders it a highly promising structure for the miniaturization of optical devices. We delve into the mode characteristics in two-dimensional PCWs on thin film lithium niobate, establish the correlation between the single-mode region in the PCW and its photonic crystal duty cycle, and observe mode hybridization in the waveguide. A lithium niobate PCW with sidewall angles can realize single-mode transmission or mode conversion by adjusting the width of its defective waveguides, and it is theoretically and experimentally verified that a change in the width of the waveguide shifts the operating wavelength. The results of the mode analysis are useful in the design of waveguide structures for photonic crystal-based electro-optical modulators and optical sensors. [ABSTRACT FROM AUTHOR]

The influence of electrodes on antiferroelectricity and fatigue endurance of 15 nm thick Hf0.2Zr0.8O2 thin films has been studied by a metal–antiferroelectric–metal capacitor structure using TiN and W as electrodes. The W|Hf0.2Zr0.8O2|W capacitor shows significantly enhanced antiferroelectricity and better endurance compared to the capacitor using TiN as the electrode. Assisted by grazing incidence x-ray diffraction and scanning transmission electron microscopy, the different electrical properties are discussed based on the contents of different phases and the diffusion of oxygen from the thin film into electrodes. [ABSTRACT FROM AUTHOR]

Self-powered deep ultraviolet (DUV) photodetectors (PDs) have attracted considerable attention in environmental, industrial, and military fields because of their power-independent and environmentally sensitive photodetection. However, DUV PDs based on traditional thin film structures are limited by the low intrinsic mobility of aluminum-gallium nitride (AlGaN) and the large barrier width of the heterogeneous structure, which makes it difficult to achieve efficient spontaneous separation, resulting in lower responsiveness and a slow response speed. Herein, a 2D/3D DUV PD based on the MXene, niobium carbide (Nb2CTx)/AlGaN van der Waals heterojunctions (vdWHs) has been proposed. The as-prepared DUV PDs revealed self-powered properties with a high responsivity of 101.85 mA W−1, as well as a fast response (rise/decay time of 21/22 ms) under 254 nm DUV illumination, thanks to the excellent electrical conductivity and tunable work function of the MXene. It also showed a large linear dynamic range of 70 dB under −2 V bias because of the strong DUV absorption of MXene/AlGaN vdWH, and the enhanced carrier mobility under high illumination density. This study presents an easy processing route to fabricate high-performance self-powered DUV PDs based on MXene/AlGaN vdWHs for DUV communication. [ABSTRACT FROM AUTHOR]

As an emerging family of perovskites with S or Se anions, chalcogenide perovskites possess excellent optoelectronic properties that are comparable with halide perovskites, e.g., efficient carrier transport abilities and defect tolerance. Moreover, they are thermodynamically stable and constituted by eco-friendly elements. Among them, chalcogenide perovskite SrHfS3 is found to be a promising light emitting material and is experimentally demonstrated to be a suitable host for the luminescent lanthanide ions like Eu2+. In order to be applied in practical light emitting devices, preparation of the thin film is a critical step. Unfortunately, there are few reports on the growth of SrHfS3 thin films, hindering the knowledge of their thin film properties and applications. In this work, SrHfS3 thin films are prepared by magnetron sputtering from a commercial SrHfO3 target and subsequent sulfurization. Then, Eu2+ doping in SrHfS3 thin films is achieved by co-sputtering from a home-made EuS target. The SrHfS3 thin films exhibit high-quality crystallinity, smooth morphology, and high p-type mobility. With efficient Eu2+ doping strategy, SrHfS3:Eu2+ thin films show intensive red light, which sets foundations for their further application in practical light emitting devices. [ABSTRACT FROM AUTHOR]

High-quality factor microwave resonators operating in a magnetic field are a necessity for some quantum sensing applications and hybrid platforms. Losses in microwave superconducting resonators can have several origins, including microscopic defects, usually known as two-level-systems. Here, we characterize the magnetic field response of NbTiN resonators patterned on sapphire and observe clear absorption lines occurring at specific magnetic fields. We identify the spin systems responsible for these features, including a yet unreported spin with g = 1.85 that we attribute to defects in the NbTiN thin film. We develop mitigation strategies involving, namely, an aluminum etch mask, resulting in maintaining quality factors above Q > 2 × 10 5 in the range of 0–0.3 T. [ABSTRACT FROM AUTHOR]

Nowadays, ferroelectric photovoltaic synapses have attracted great attention due to its polarization controllable and self-powered features. However, the large bandgaps of ferroelectric oxide materials limit its application. This study focuses on the enhancement of ferroelectric photovoltaic properties and the synaptic application of Bi2FeCrO6 (BFCO) device. It is found that the bandgap of BFCO can be modulated by Cr alloying, which causes its photovoltaic effect in the visible region to exceed that of BiFeO3 (BFO) significantly. The short-circuit current density (JSC) of BFCO device in the visible region increases by about 100 times than that of BFO. Furthermore, the polarization modulation and multi-states response are demonstrated by an external electric field. For BFCO ferroelectric photovoltaic synapse, long-term potentiation/depression (LTP/LTD) measurements show an excellent synaptic plasticity of the polarization modulation. The simulated image recognition rate using the MNIST dataset reaches a high accuracy of 96.06%. This work has expanded the potential application of ferroelectric photovoltaic synapse in the visible region. [ABSTRACT FROM AUTHOR]

Polarization hysteresis is the defining characteristic of ferroelectrics, though the measurement of ferroelectric hysteresis is often complicated by artifacts such as leakage current and not all materials with apparent electrical hysteresis are ferroelectric. In this Letter, we have set up an operando second harmonic generation (SHG) system to track intrinsic ferroelectric switches under electric field, which is free from leakage current interference, thus yielding a signature for intrinsic ferroelectricity. Taking representative PbZr0.2Ti0.8O3 (PZT) thin films with different thicknesses as examples, the operando SHG system can capture ferroelectric hysteresis not only for PZT films thicker than 50 nm, for which conventional hysteresis measurement works, but also for PZT film as thin as 26 nm, for which conventional measurement fails due to the presence of large leakage current. Different domain evolution processes in these films are also illustrated. [ABSTRACT FROM AUTHOR]

In this work, we investigate the use of post-fabrication thermal nanoconversion (TNC), using a heated scanning probe tip, to modify the magnetic properties of Ni80Fe20 elliptical nanoislands with varying aspect ratio. Despite Ni80Fe20 being unoptimized for TNC, by comparing quasistatic and dynamic magneto-optical Kerr effect microscopy measurements, we demonstrate that TNC at a contact temperature of 250 °C increases the saturation magnetization of the treated nanoislands, reaching a value close to 800 kA/m. Micromagnetic simulations of the nanoislands indicate that the TNC technique can be used to alter the remanent state, from a single domain to a vortex. These results demonstrate the opportunities afforded by TNC to modify the properties of selected areas in a thin film or a patterned sample, particularly when designing magnonic crystals and other nanomagnetic devices. [ABSTRACT FROM AUTHOR]