Search

P-type Cu2O is a promising CMOS-compatible candidate to fabricate memristive devices for nextgeneration memory, logic and neuromorphic computing. In this letter, the microscopic switching and conducting mechanisms in TiW/Cu2O/Cu memristive devices have been thoroughly investigated. The bipolar resistive switching behaviors without an electro-forming process are ascribed to the formation and rupture of the conducting filaments composed of copper vacancies. In the low resistive state, the transport of electrons in the filaments follows Mott's variable range hopping theory. When the devices switch back to high resistive state, the coexistence of Schottky emission at the Cu/Cu2O interface and electron hopping between the residual filaments is found to dominate the conducting process. Our results will contribute to the further understanding and optimization of p-type memristive materials. [ABSTRACT FROM AUTHOR]

A thermodynamic model coupled with an electrostatic analysis of dielectric-ferroelectric-dielectric sandwich structures shows that high capacitance densities can be achieved when the total dielectric thickness reaches a critical fraction. For such cases, the induced polarization in the linear dielectrics (e.g., SiO2, Ta2O5, HfO2, Al2O3, and ZrO2) increases the overall permittivity until the internal electric field in the ferroelectric layer suppresses the spontaneous polarization of the ferroelectric. Beyond this critical fraction, the ferroelectric layer can no longer induce polarization in the dielectric layers. We specifically determine the critical fraction required for Ba1-xSrxTiO3 (0≤x≤=0.2) and Pb1-xZrxTiO3 (0≤x≤=0.5) solid solutions [ABSTRACT FROM AUTHOR]