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Electron‐beam evaporation was used as a low‐temperature deposition process of boron and boron/amorphous‐silicon layers as dopant sources in rapid thermal diffusion. High efficiency of doping is attributed to high dopant supply from the boron layer to the silicon substrate. Oxygen ambient leads to layer consumption and thus opens possibility for the source removal after diffusion. Dopant activation results in high carrier concentration within the junctions. High concentrations of dopant cause generation of precipitates at the B/Si substrate interface but not at the B/Si cap interface. The process is compatible with the complementary‐metal‐oxide‐semiconductor technology since the low temperature of the source deposition facilitates masking of the dopant by a patterned photoresist and its subsequent lift‐off removal from the silicon surface.

We report on investigations of nonlinear radiofrequency responses of electrolytes with Na(+) and Cl(-) ions placed within gold electrodes of a capacitor. The sample was part of a frequency-adjustable inductance-capacitance-resistance (LCR) parallel resonant circuit, and measurements were carried out using the two frequencies intermodulation distortion technique. We employed double layer model to analyze the observed nonlinearities and their dependence on ionic concentration. Electrode-electrolyte interface polarization was found to be a predominant cause of this intrinsic nonlinearity and to be dependent on electrolytic ion concentration. We also measured and calculated coefficients of resistive and capacitive components of the observed nonlinearity.

A film residue obtained by evaporating surfactant-stabilized single-walled carbon nanotube (SWNT) suspension was characterized at 12 GHz using a scanning-sample dielectric resonator technique. Resonant frequency and quality factor changes were measured and cavity perturbation method was used to calculate the SWNT complex permittivity. The effective permittivity of the SWNT was determined as (3516-j316.5), which provided an average dielectric constant and conductivity for a single SWNT to be 8.1×105 and 8.4×106 S/m, respectively. Microwave induced losses originated only from the electric field, not from the magnetic field, thus indicating an absence of direct electrical contact between nanotubes and a below percolation-limit configuration.