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Your search keyword '"ZHANG, Zhiyong"' showing total 25 results
Start Over Author "ZHANG, Zhiyong" Journal applied physics letters
25 results on '"ZHANG, Zhiyong"'

6. Lowering interface state density in carbon nanotube thin film transistors through using stacked Y2O3/HfO2 gate dielectric.

Author

Xu, Lin, Gao, Ningfei, Zhang, Zhiyong, and Peng, Lian-Mao

Subjects
WAFER-scale integration of circuits, TRANSISTORS, CARBON nanotubes, THIN film transistors, SUBSTRATES (Materials science), PHOTOLITHOGRAPHY
Abstract

Wafer-scale fabrication of transistors is the prerequisite for practical applications of carbon nanotube (CNT) based electronics. In this work, we fabricated top-gated thin film transistors (TFTs) based on solution-derived CNT film prepared on a 2 in. substrate through a photolithography based process. In particular, we improved the gate dielectric layer in CNT TFTs through using a thin thermal oxidized Y2O3 film as a buffer layer before the growth of high-κHfO2 layer. The introduction of the Y2O3 film significantly enhanced the performance of CNT TFTs, including the improved on-state current and transconductance, lowered threshold voltage and subthreshold swing, and drastically enhanced carrier mobility, owing to the reduction of the interface state density and scattering centers. Quantitative extraction of the interface state density based on either capacitance-voltage measurements or subthreshold swing data further demonstrates that the introduction of the Y2O3 interlayer reduces the interface state density from 9.24 × 1012 cm−2 to 4.63 × 1012 cm−2 in the gate insulator. [ABSTRACT FROM AUTHOR]

Published
2018
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25. Electrical transport properties of individual WS2 nanotubes and their dependence on water and oxygen absorption.

Author

Zhang, Chaoying, Ning, Zhiyuan, Liu, Yang, Xu, Tingting, Guo, Yao, Zak, Alla, Zhang, Zhiyong, Wang, Sheng, Tenne, Reshef, and Chen, Qing

Subjects
NANOTUBES, ELECTRIC properties of nanostructured materials, ABSORPTION, ELECTRIC conductivity, COVALENT bonds, X-ray diffraction
Abstract

The electrical properties of WS2 nanotubes (NTs) were studied through measuring 59 devices. Important electrical parameters, such as the carrier concentration, mobility, and effective barrier height at the contacts, were obtained through fitting experimental non-linear I-V curves using a metal-semiconductor-metal model. The carrier mobility was found to be several orders of magnitude higher than that have been reported previously for WS2 NTs. Water absorption was found to decrease the conductivity and carrier mobility of the NTs, and could be removed when the sample was dried. Oxygen absorption also slightly decreased the conductivity of WS2 NTs. [ABSTRACT FROM AUTHOR]

Published
2012
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