1. Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures
- Author
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Kenta Watanabe, Takuji Hosoi, Akitaka Yoshigoe, Takayoshi Shimura, Tetsuzo Ueda, Satoshi Nakazawa, Masahiro Ishida, Takahiro Yamada, Heiji Watanabe, Yoshiharu Anda, and Mikito Nozaki
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Wide-bandgap semiconductor ,02 engineering and technology ,Dielectric ,021001 nanoscience & nanotechnology ,01 natural sciences ,Metal ,visual_art ,0103 physical sciences ,visual_art.visual_art_medium ,Optoelectronics ,Process window ,Thermal stability ,Diffusion (business) ,0210 nano-technology ,business ,Layer (electronics) ,Deposition (law) - Abstract
Important clues for achieving well-behaved AlGaN/GaN metal-oxide-semiconductor (MOS) devices with Al-based gate dielectrics were systematically investigated on the basis of electrical and physical characterizations. We found that low-temperature deposition of alumina insulators on AlGaN surfaces is crucial to improve the interface quality, thermal stability, and variability of MOS devices by suppressing Ga diffusion into the gate oxides. Moreover, aluminum oxynitride grown in a reactive nitric atmosphere was proven to expand the optimal process window that would improve the interface quality and to enhance immunity against charge injection into the gate dielectrics. The results constitute common guidelines for achieving high-performance and reliable AlGaN/GaN MOS devices.
- Published
- 2017