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Your search keyword '"Yong, Tian"' showing total 6 results
Start Over Author "Yong, Tian" Journal applied physics letters
6 results on '"Yong, Tian"'

4. Spatial and energetic distribution of border traps in the dual-layer HfO2∕SiO2 high-k gate stack by low-frequency capacitance-voltage measurement

Author

Mao-Chieh Chen, Mong-Song Liang, Bing-Yue Tsui, Hun Jan Tao, Wei Hao Wu, Y. Jin, Chen Shih Chang, and Yong Tian Hou

Subjects
Materials science, Physics and Astronomy (miscellaneous), business.industry, Analytical chemistry, Dielectric, Low frequency, Capacitance, law.invention, Capacitor, law, Optoelectronics, Charge carrier, Transient (oscillation), business, Quantum tunnelling, High-κ dielectric
Abstract

Threshold voltage instability measured by the pulse current-voltage technique has been recognized as the transient charging and discharging of the preexisting bulk traps in Hf-based high-k gate dielectrics, and these high-k traps or called border traps can instantly exchange charge carriers with the underlying Si substrate by tunneling through the thin interfacial oxide. Based on an elastic tunneling model through trapezoidal potential barriers, the spatial and energetic distribution of border traps in the HfO2∕SiO2 high-k gate stack can be profiled as a smoothed, three-dimensional mesh by measuring the low-frequency capacitance-voltage characteristics of high-k metal-oxide-semiconductor capacitors with n-type Si substrate.

Published
2006

5. All-dielectric three-dimensional broadband Eaton lens with large refractive index range.

Author

Ming Yin, Xiao Yong Tian, Ling Ling Wu, and Di Chen Li

Subjects
*DIELECTRIC materials, *REFRACTIVE index, *GRADIENT index optics, *PHOTONIC crystals, *THREE-dimensional printing, *BANDWIDTHS
Abstract

We proposed a method to realize three-dimensional (3D) gradient index (GRIN) devices requiring large refractive index (RI) range with broadband performance. By combining non-resonant GRIN woodpile photonic crystals structure in the metamaterial regime with a compound liquid medium, a wide RI range (1-6.32) was fulfilled flexibly. As a proof-of-principle for the low-loss and nondispersive method, a 3D Eaton lens was designed and fabricated based on 3D printing process. Full-wave simulation and experiment validated its omnidirectional wave bending effects in a broad bandwidth covering Ku band (12 GHz-18 GHz). [ABSTRACT FROM AUTHOR]

Published
2014
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6. Spatial and energetic distribution of border traps in the dual-layer HfO2/SiO2 high-k gate stack by low-frequency capacitance-voltage measurement.

Author

Wei-Hao Wu, Bing-Yue Tsui, Mao-Chieh Chen, Yong-Tian Hou, Yin Jin, Hun-Jan Tao, Shih-Chang Chen, and Mong-Song Liang

Subjects
ENERGY-band theory of solids, ELECTRON mobility, METAL oxide semiconductors, ELECTRIC insulators & insulation, DIELECTRIC devices, ELECTROPHYSIOLOGY techniques
Abstract

Threshold voltage instability measured by the pulse current-voltage technique has been recognized as the transient charging and discharging of the preexisting bulk traps in Hf-based high-k gate dielectrics, and these high-k traps or called border traps can instantly exchange charge carriers with the underlying Si substrate by tunneling through the thin interfacial oxide. Based on an elastic tunneling model through trapezoidal potential barriers, the spatial and energetic distribution of border traps in the HfO2/SiO2 high-k gate stack can be profiled as a smoothed, three-dimensional mesh by measuring the low-frequency capacitance-voltage characteristics of high-k metal-oxide-semiconductor capacitors with n-type Si substrate. [ABSTRACT FROM AUTHOR]

Published
2006
Full Text
View/download PDF

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