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Start Over Author "Xie M" Journal applied physics letters
32 results on '"Xie M"'

28. Growth of multilayers of Bi2Se3/ZnSe: Heteroepitaxial interface formation and strain.

Author

Li, H. D., Wang, Z. Y., Guo, X., Wong, Tai Lun, Wang, Ning, and Xie, M. H.

Subjects
MULTILAYERED thin films, MOLECULAR beam epitaxy, BISMUTH compounds, ZINC selenide, INTERFACES (Physical sciences), STRAINS & stresses (Mechanics), NUCLEATION
Abstract

Multilayers of Bi2Se3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi2Se3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi2Se3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi2Se3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi2Se3, which could be attributed to the specific growth modes and the properties of Bi2Se3 and ZnSe surfaces. [ABSTRACT FROM AUTHOR]

Published
2011
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29. Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN.

Author

Darakchieva, V., Xie, M.-Y., Tasnádi, F., Abrikosov, I. A., Hultman, L., Monemar, B., Kamimura, J., and Kishino, K.

Subjects
*LATTICE dynamics, *OPTICAL diffraction, *X-rays, *RAMAN effect, *INDIUM
Abstract

The lattice parameters of InxAl1-xN in the whole compositional range are studied using first-principle calculations. Deviations from Vegard’s rule are obtained via the bowing parameters, δa=0.0412±0.0039 Å and δc=-0.060±0.010 Å, which largely differ from previously reported values. Implications of the observed deviations from Vegard’s rule on the In content extracted from x-ray diffraction are discussed. We also combine these results with x-ray diffraction and Raman scattering studies on InxAl1-xN nanocolumns with 0.627<=x<=1 and determine the E2 phonon frequencies versus In composition in the scarcely studied In-rich compositional range. [ABSTRACT FROM AUTHOR]

Published
2008
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30. A study of Al1-xInxN growth by reflection high-energy electron diffraction—incorporation of cation atoms during molecular-beam epitaxy.

Author

Shi, B. M., Wang, Z. Y., Xie, M. H., and Wu, H. S.

Subjects
MOLECULAR beam epitaxy, ELECTRON diffraction, TEMPERATURE, ALLOYS, ALUMINUM, EXPERIMENTAL design
Abstract

Molecular-beam epitaxy of Al1-xInxN alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 °C. [ABSTRACT FROM AUTHOR]

Published
2008
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31. Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy.

Author

Liu, Y., Xie, M. H., Wu, H. S., and Tong, S. Y.

Subjects
*MASS transfer, *THERMODYNAMICS, *MOLECULAR beam epitaxy, *NITROGEN, *SURFACE chemistry, *WETTING agents
Abstract

During Stranski-Krastanov (SK) growth of InN on GaN by molecular-beam epitaxy, a mass transport is noted from the two-dimensional wetting layer and/or the surface excess metal adlayers to the SK islands when the excess nitrogen flux is used for deposition. The extent of mass transport depends on the material coverage. For growth under the excess indium flux condition, no such mass transport is observed. [ABSTRACT FROM AUTHOR]

Published
2006
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32. Annealing effects on sulfur vacancies and electronic transport of MoS2 films grown by pulsed-laser deposition.

Author

Xie, M. Z., Zhou, J. Y., Ji, H., Ye, Y., Wang, X., Jiang, K., Shang, L. Y., Hu, Z. G., and Chu, J. H.

Subjects
*MOLYBDENUM oxides, *OHMIC contacts, *X-ray spectroscopy, *SULFUR, *RAMAN spectroscopy, *HYDROGEN evolution reactions, *MOLYBDENUM
Abstract

We have synthesized high quality and large area MoS2 films on flexible fluorophlogopite substrates using the pulsed-laser deposition (PLD) technique. Annealing in a sufficient sulfur atmosphere was adopted to eliminate oxide molybdenum and sulfur vacancies introduced during the growth in the vacuum chamber. X-ray photoelectron spectroscopy results demonstrate the advantages benefitted from the annealing process. The S/Mo ratio of the annealed MoS2 film was 1.98:1, which was much closer to the theoretical value. Raman spectroscopy, Photoluminescence spectroscopy, and X-ray diffraction spectroscopy provided direct evidence for the crystallinity improvement. Due to the elimination of molybdenum oxide, the Fermi level was shifted by 0.175 eV, and the conductive type changes from the Ohmic contact to the Schottky contact. The optimized method in this paper makes the PLD-derived MoS2 films promising candidates for microelectronic device application. [ABSTRACT FROM AUTHOR]

Published
2019
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