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Employing a pump-probe polarization-based two-frame shadowgraphy setup, the formation of filamentary damage induced in bulk fused silica by a nanosecond pulse at 1064 nm is investigated with a picosecond probe. Three different phases are exhibited in the damage experiments. The first phase is the formation of a micrometric plasma channel along the laser direction during the beginning of the pulse likely caused by multi-photon ionization. This channel exhibits growth during 400 ps, and the newly grown plasma is discrete. Then, during the end of the pulse, this channel evolves into a tadpole-like morphology showing an elliptical head upstream the laser flux followed by a thin tail. This observed asymmetry is attributed to shielding effects caused by both the plasma and hot modified silica. Once the damage shows its almost final morphology, a last phase consists in the launch of a pressure wave enlarging it after the laser pulse. The physical mechanisms that might be involved in the formation of plasma channels are discussed. The experimental data are first confronted to the moving breakdown model which overestimates the filamentary damage length. Finally, taking into account the temporal shape of the laser pulses, the coupling between Kerr-induced self-focusing and stimulated Brillouin scattering is discussed to interpret the observations. [ABSTRACT FROM AUTHOR]

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B + ion implantation on Hgvacancy- doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays. [ABSTRACT FROM AUTHOR]