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The electrical performance of suspended few-layer MoTe2 field-effect-transistors with ionic liquid gating has been investigated. The suspended structure not only enhances the mobility of MoTe2 by removing the influence of the substrate but also allows ions to accumulate on both the top and the bottom surface of MoTe2. The consequent increase in the gate capacitance resulted in an improved subthreshold swing (∼73 mV/dec) and on-off ratio (106) at room temperature for suspended MoTe2 compared to substrate-supported devices. Suspended transistors with ionic liquid gating enable a larger charge density compared to ionic liquid gated supported devices and may provide a useful platform to study screening physics in 2D materials.

The effect of Si doping in MgO has been investigated in order to improve the material properties of the MgO protecting layer in plasma display panels. A small amount of Si was added to the MgO pellet while the MgO layer was being deposited by using an electron-beam evaporation method. Both the surface characteristics of the protecting layer and the electro-optical properties of 4in. test panels were investigated, such as firing and sustain voltages, luminous efficacy, addressing jitter, and image sticking. The firing voltage is minimized when the Si concentration is 0.03%∼0.04%, where the luminous efficacy increases up to 35% compared with that of the conventional MgO film, and the boundary image sticking also shows good characteristics around the Si concentration level by 0.04%.