1. Determination of composition and strain field of a III∕V quaternary quantum dot system
- Author
-
L. Müller-Kirsch, Holm Kirmse, Wolfgang Neumann, R. Otto, Dieter Bimberg, Andreas Rosenauer, and Ines Häusler
- Subjects
chemistry.chemical_compound ,Physics and Astronomy (miscellaneous) ,Semiconductor quantum dots ,Chemistry ,Quantum dot ,Transmission electron microscopy ,Lattice (order) ,Analytical chemistry ,Nucleation ,High resolution ,Chemical vapor deposition ,Gallium arsenide - Abstract
A system composed of a double layer of stacked quantum dots (QDs) of (In,Ga)As and Ga(Sb,As) was investigated by quantitative high-resolution transmission electron microscopy. The layers were grown by metalorganic chemical vapor deposition on a GaAs substrate. The strain field of the lower quantum dots determines the nucleation in the subsequent layer. Investigating this effect, the strain field as well as the composition could be measured at high resolution. Local changes of lattice distances could be quantified with a precision of 0.003nm. The error in determining the local composition inside the InxGa1−xAs resp., GaSbyAs1−y QDs amounts to ΔxIn=0.02 and ΔySb=0.03.
- Published
- 2004