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Start Over Author "Weis, C." Journal applied physics letters
7 results on '"Weis, C."'

7. Stark shift and field ionization of arsenic donors in 28Si-silicon-on-insulator structures.

Author

Lo, C. C., Simmons, S., Nardo, R. Lo, Weis, C. D., Tyryshkin, A. M., Meijer, J., Rogalla, D., Lyon, S. A., Bokor, J., Schenkel, T., and Morton, J. J. L.

Subjects
SILICON-on-insulator technology, SILICON wafers, STARK effect, LOW temperatures, ARSENIC, ION implantation
Abstract

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa = 1.9±0.7×10-3 μm²/V². We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance. [ABSTRACT FROM AUTHOR]

Published
2014
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