1. Nickel silicidation on n and p-type junctions at 300°C
- Author
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Aditya Agarwal, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu, Wayne Holland, J. M. Poate, and Yu-Long Jiang
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Dopant ,Analytical chemistry ,chemistry.chemical_element ,Nickel ,chemistry.chemical_compound ,chemistry ,X-ray photoelectron spectroscopy ,Electrical resistivity and conductivity ,Transmission electron microscopy ,Silicide ,Thin film ,Sheet resistance - Abstract
The electrical and materials properties of ∼20nm nickel silicide films, formed at 300°C, on n+∕p and p+∕n junctions are investigated. The sheet resistance of the silicide on p+∕n junctions is found to be more than twice as high as that of the silicide on n+∕p junctions. Cross section transmission electron microscopy, Rutherford backscattering spectroscopy, and x-ray photoelectron energy spectroscopy reveal that a pure Ni2Si layer forms on n+∕p junctions while a thicker Ni2Si∕NiSi double layer (∼60% Ni2Si) forms on p+∕n junctions. But the electrical differences are found to correlate only with differences in grain size and dopant concentration in the silicide.
- Published
- 2004
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