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In this letter, we report the photoinduced effect modulated by different electric fields in the Pr0.65 (Ca0.75Sr0.25)0.35MnO3/0.7PbMg1/3Nb2/3O3-0.3PbTiO3 heterostructure. The film exhibits a decrease in the resistance up to five orders of magnitude by enhancing applied electric fields, combined with an electric-field-induced insulator-to-metal transition. More interestingly, a reversible bistability arises in the photoinduced change in resistance at T<80K as the voltages are increased. The results can be attributed to the phase separation in manganites, which provides a prototype of photoelectric conversion for electric-field modulation of all-oxide heterostructures. [ABSTRACT FROM AUTHOR]

Spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) are observed simultaneously in the Pt/Y3Fe5O12 hybrid structure when thermal gradient is produced by Joule heating. According to their dependences on applied current, these two effects can be separated. Their dependence on heating power and magnetic field is systematically studied. With the increase of heating power, the SSE enhances linearly, whereas the SMR decreases slowly. The origin of the spin currents is further analyzed. The heating power dependences of the spin currents associated with the SSE and the SMR are found to be different. [ABSTRACT FROM AUTHOR]

We investigate the solid phase epitaxial regrowth (SPER) dynamics of phosphorus doped Si:C by time resolved reflectivity and high resolution x-ray diffraction. The effect of SPER kinetics on strain profile and dopant activation is analyzed. The accumulated tensile strain induced by both C and P during SPER synergistically determines the onset of SPER rate retardation and leads to lower strain and electrical conductance near surface. Physical origin for the observed SPER rate evolution is discussed and explained with a strain included solute trapping model. Possibility of tailoring strain and doping profiles is discussed. [ABSTRACT FROM AUTHOR]

Palladium, Pt, and Cr/Pt contacts to the wide band gap icosahedral boride semiconductor B12As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while Cr/Pt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3×10-4 Ω cm2 after the Cr/Pt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing. [ABSTRACT FROM AUTHOR]

Palladium, Pt, and Cr/Pt contacts to the wide band gap icosahedral boride semiconductor B12As2 have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while Cr/Pt contacts were Ohmic. The specific contact resistance was reduced from 6 Ω cm2 as-deposited to 3×10-4 Ω cm2 after the Cr/Pt contacts were annealed at 750 °C for 30 s in Ar. Annealing at 600 °C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing. [ABSTRACT FROM AUTHOR]