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Temperature-dependent photoluminescence (PL) of graphene oxide (GO) reduced with hydrazine and heat has been measured to investigate the effect of reduction type on the bandgap of the reduced GO. Nitrogen functionalities formed in the hydrazine-treated GO were responsible for a strong localization of carriers that caused in a fluctuation in PL peak position with temperature. The intensity of C-OH peak was relatively low in the heat-treated GO, indicating that raising temperature facilitated the removal of hydroxyl groups, resulting in larger sp2 domain size and smaller bandgap energy.

We report a device that combines indium tin oxide (ITO) nanodot nodes with two-dimensional chemically converted graphene (CCG) films to yield a GaN-based light emitting diode (LED) with interesting characteristics for transparent and current spreading electrodes for the potential use in the ultraviolet region. The current-voltage characteristics and electroluminescence output power performance showed that CCG network on ITO nanodot nodes operated as a transparent and current spreading electrode in LED devices.

We investigated spatial light emission from a periodic inverted polygonal deflector, which included six {10-1-1} facets and six {11-2-2} facets embedded in an InGaN∕GaN light emitting diode by using confocal scanning electroluminescence microscopy. We found a noticeable crown shape with the contrast of luminescence intensity and wavelength observed on these facets mainly due to the variation of growth rate for the InGaN quantum wells. In addition, a very low intensity and blueshifted emission wavelength on the {11-2-2} facets indicated the deficiency of indium incorporation and/or much thinner well thickness as compared to that of the {10-1-1} facets.

This letter proposes a concept of InGaN∕GaN light emitting diodes with periodic deflector embedded structure (PDE-LED). The PDE-LED was grown on a sapphire substrate with SiO2 hexagonal patterned mask using selective metal-organic chemical deposition. More than 200 artificial inverted polygonal pyramids (AIPPs), which included six R planes and six N planes deflectors with inclined angles of 57° and 61°, respectively, were formed and periodically distributed on masked area. These AIPP deflectors revealed a superior capability of enhancing light extraction efficiency mainly because the AIPP deflector structure could provide multiple chances for photons to escape from the LED sidewall as opposed to a rectangular conventional LED. Thus, the light output power of the PDE-LED was 1.51 times higher than that of a conventional LED at an injection current of 20mA, while forward bias voltage and leakage current were compatible to those of conventional LEDs.

The authors have demonstrated an effective method to obtain high light output power of GaN-based light-emitting diodes (LEDs) by simultaneous enhancement of internal quantum efficiency and light extraction efficiency. Micropit InGaN∕GaN LEDs were fabricated on hexagonal-shaped GaN template through wet-etched substrate patterning. The result indicated that under optimized growth condition of high temperature GaN template, micropits could be formed and distributed in an aligned manner by growing on wet-etch patterned sapphire substrate. The LED structures showed superior optical output power, which directly resulted from not only effective elimination of threading dislocation of the epitaxial layers but also significant increase in light extraction efficiency via the inclined facets of aligned micropits.