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91 results on '"Ting CHEN"'

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1. Perspective on oxide-based three-terminal artificial synapses in physical neural networks

2. Interfacial traps and band offset enabled charge separation facilitating current/capacitance hysteresis in dual-oxide layered structure

4. Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

5. Vertical split-ring resonator based nanoplasmonic sensor

6. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

7. Magnetic-field annealing of inverted polymer:fullerene hybrid solar cells with FePt nanowires as additive

8. Effects of sidewall etching on electrical properties of SiOx resistive random access memory

9. Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

10. Optical bistability in ceramic ferroelectrics due to thermal focusing

11. Low power consumption resistance random access memory with Pt/InOx/TiN structure

12. Enhancement of the stability of resistive switching characteristics by conduction path reconstruction

13. ZnO-SiO2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer

14. Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

15. Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOxresistive random access memory

16. GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition

17. Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

18. Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2O3-InP metal-oxide-semiconductor field-effect transistor

19. Study of polarity effect in SiOx-based resistive switching memory

20. HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

21. Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

22. Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

23. Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite

24. High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials

25. Manipulation of multidimensional plasmonic spectra for information storage

26. Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/n+ tunneling junction

27. InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

28. Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor

29. Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory

30. Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

31. Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

32. Fluorinated HfO2 gate dielectric engineering on In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

33. Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

34. Blue light-emitting diodes with a roughened backside fabricated by wet etching

35. Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

36. Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å

37. High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer

38. Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics

39. Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces

41. Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization

42. Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air.

43. Vertical split-ring resonator based nanoplasmonic sensor.

44. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors.

45. Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite.

46. High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials.

47. Manipulation of multidimensional plasmonic spectra for information storage.

48. Focusing of the lowest antisymmetric Lamb wave in a gradient-index phononic crystal plate.

49. Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory.

50. Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors.

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