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Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail. [ABSTRACT FROM AUTHOR]

Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail. [ABSTRACT FROM AUTHOR]

We present cross-sectional scanning tunneling microscopy results of self-organized In[sub 0.8]Ga[sub 0.2]As quantum dots covered by an In[sub 0.1]Ga[sub 0.9]As film inside a GaAs matrix prepared by metalorganic chemical vapor deposition. From images of quantum dots with atomic resolution, we determine a spatial distribution of the In composition within the dots with a shape of a reversed truncated cone. The wetting layer and the overgrown In[sub 0.1]Ga[sub 0.9]As layer show vertical intermixing. [ABSTRACT FROM AUTHOR]

Examines the growth of epitaxial titanium nitride thin films by pulsed reactive crossed-beam laser ablation. Factors contributing to the formation of titanium nitride (TiN) films; Information on the role of surface diffusion in epitaxial growth; Details on the substrate and film morphologies of the TiN thin films using atomic force microscopy.