1. PbZrO3-based thin film capacitors with high energy storage efficiency.
- Author
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Son, Yeongwoo, Udovenko, Stanislav, Gaur, Anand P. S., Cui, Jun, Tan, Xiaoli, and Trolier-McKinstry, Susan
- Subjects
PULSED laser deposition ,ENERGY storage ,ENERGY dissipation ,THIN films ,OXIDE coating - Abstract
Antiferroelectric (Pb
0.87 Sr0.05 Ba0.05 La0.02 )(Zr0.52 Sn0.40 Ti0.08 )O3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO3 /SrTiO3 substrates by pulsed laser deposition. The out-of-plane lattice constant of the thin film was 4.110 ± 0.001 Å. An average maximum recoverable energy storage density, 88 ± 17 J cm−3 with an efficiency of 85% ± 6% at 1 kHz and 80 ± 15 J cm−3 with an efficiency of 91% ± 4% at 10 kHz, was achieved at room temperature. The capacitor was fatigue resistant up to 106 cycles at an applied electric field of 2 MV cm−1 . These properties are linked to a low level of hysteresis and slow polarization saturation. PbZrO3 -derived oxide thin film capacitors are promising for high efficiency and low loss dielectric energy storage applications. [ABSTRACT FROM AUTHOR]- Published
- 2024
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