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Start Over Author "Souza J" Journal applied physics letters
18 results on '"Souza J"'

16. N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap.

Author

Sadana, D. K., de Souza, J. P., and Cardone, F.

Subjects
*GALLIUM arsenide, *RAPID thermal processing
Abstract

Shallow (<200 nm) Si profiles with doping levels in excess of 2×1018 cm-3 were reproducively obtained in GaAs by rapid thermal oxidation (RTO) of Si caps (50 or 160 nm) in 0.1% O2/Ar ambient at 850–1050 °C. The doping level as well as distribution of the diffused Si can be controlled by the thickness of the Si cap, RTO temperature, RTO time, and oxygen level in the annealing ambient. It appears that the generation of Si interstitials at the oxidizing surface of the Si cap during RTO is responsible for the Si diffusion into the underlying GaAs substrate. [ABSTRACT FROM AUTHOR]

Published
1990
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17. Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap.

Author

de Souza, J. P., Sadana, D. K., Baratte, H., and Cardone, F.

Subjects
*SILICON, *GALLIUM arsenide, *CHEMICAL vapor deposition, *SILICON nitride
Abstract

It is demonstrated using rapid thermal annealing that the electrical activation of Si+-implanted GaAs capped with a plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SixNy) layer requires longer annealing times compared to capless annealing. The SIMS profiles of 2H from the GaAs samples onto which SixNy caps were deposited using deuterated ammonia showed that deuterium atoms diffuse readily into the implanted region during PECVD. The improvement in the electrical activation of the capped samples with annealing time correlates directly with decreasing concentration of the 2H in the GaAs. It is postulated that the H atoms diffusing into GaAs during PECVD are trapped by the implantation-induced damage and the delay in electrical activation corresponds to the time required for the release of the trapped H. [ABSTRACT FROM AUTHOR]

Published
1990
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