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Substantial interactions between drifting carriers in a semiconductor and slow circuit waves on meander lines have been demonstrated for the first time. Electronic gains in the meander‐meander line signal of up to 40 dB/cm were obtained with Ge at 4.2°K. Although no net gain was achieved with respect to the ports of the meander lines due to the structure's high transmission loss of 20–30 dB, the results demonstrate the possibility of solid‐state slow‐wave amplification which has been the subject of many previous theoretical studies.

A forward‐propagating surface‐acoustic‐wave signal interacts with a pump field applied to a nearby semiconductor. The result is the generation of a backward‐propagating ``echo'' whose envelope is the correlation of the signal and the pump. The echo is 25 dB down from signal for the pump power used.