Search

A modified separation by implantation of oxygen process has been developed to sculpt vertically coupled microdisk resonators in silicon. The approach involves the implantation of oxygen ions into a silicon substrate, patterned with thermal oxide, to define waveguides on the bottom silicon layer, and photolithography and reactive ion etching to define the microdisk resonators on the top silicon layer. The top and the bottom silicon layers are separated by the oxide layer that was formed after the oxygen implantation. Fabricated microdisk resonators show resonances with a Q value of 10 300 and a free spectral range of 5.4nm.

We demonstrate that stimulated supercontinuum generation alleviates restrictions on spectral broadening in silicon waveguides. At telecommunications wavelengths, two-photon and free-carrier absorption typically deplete the pump before large broadening factors can be achieved. However, broadening via modulation instability (MI) can be enhanced by seeding, which also substantially improves the energy efficiency of spectral broadening in media with nonlinear loss. Coherent seeding also generates a stable output spectrum, in contrast to conventional approaches where broadening starts from noise. The combination of self-phase modulation and stimulated modulation instability generates broadening factors in excess of 40-fold at moderate intensity levels, with >15-times better energy efficiency.

Raman gain is a useful nonlinear phenomenon that has made optically pumped silicon lasers and amplifiers a reality. Unfortunately, the bandwidth of Raman gain in silicon is normally rather limited, owing to the narrow Raman linewidths typical of crystalline materials. Here, we report Raman amplification in silicon with a spectrum that is modified by the simultaneous occurrence of self-phase-modulation. This combined nonlinear action produces a broad Raman gain spectrum from a narrowband pump source.

Self-phase modulation is utilized to generate a continuum of wavelengths on a silicon chip. The propagation of near transform-limited, picosecond pulses (3ps) through a micron sized silicon waveguide results in the generation of a spectral continuum. This spectral continuum is then carved by microdisk resonators that are integrated three dimensionally on the same chip, resulting in multiple wavelength channels, with the farthest channel being around 3.1nm away from the center wavelength of the seed pulse. This technique can potentially enable wavelength division multiplexing at the chip level using a single off-chip laser.

Monolithic integration of photonics and electronics has been achieved in silicon by three-dimensionally integrating metal-oxide-semiconductor field-effect transistors and waveguide-coupled microdisk resonators. Implantation of oxygen ions into a silicon-on-insulator substrate with a patterned thermal oxide mask followed by a high temperature anneal was utilized to realize the buried photonic structures. This results in the formation of vertically stacked silicon layers separated from each other by an intervening oxide layer. Transistors are fabricated on the surface silicon by conventional processing techniques. Optical and electronic functionalities are thus separated into two different layers of silicon, paving the way toward dense three-dimensional optoelectronic integration.

Laterally-coupled silicon microresonators are fabricated beneath the surface of a silicon-on-insulator substrate using a modified separation by implantation of an oxygen technique. Implantation of oxygen ions into a substrate with patterned thermal oxide mask was utilized to realize buried waveguiding structures. Microdisk resonators in the buried silicon layer show loaded quality factors of 2000, with extinction ratios in excess of 20dB. The process also results in the formation of a silicon layer on the surface of the wafer that is suitable for the fabrication of electronic devices, thereby paving the way for three-dimensional monolithic integration of electronics and photonics in silicon.

Add-drop filters, based on vertically coupled microdisk resonators, have been realized in silicon, using a modified separation by implantation of oxygen process. Buried rib waveguides in the bottom-layer silicon, of a two-layer structure, are coupled to microdisk resonators in the top-layer silicon through a silicon dioxide layer formed by oxygen implantation. The radii of the microdisk structures were varied suitably to obtain resonators with slightly shifted resonance wavelengths. The average adjacent channel crosstalk suppression of these filters exhibits an upper limit of 12.11dB and a lower limit of 6.2dB over the wavelength band under consideration.