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Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3-1.1nm) are transferred into nanowires of 2-12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm². Those values are the smallest obtained with a top-down lithography method. [ABSTRACT FROM AUTHOR]

We demonstrate room temperature, continuous-wave lasing with enhanced far field emission directionality in coupled-cavity photonic crystal lasers, made with InAsP/InP quantum well material. These surface-emitting lasers can have a very low effective threshold power of 14.6 μW, with a linewidth of 60 pm, and 40% of the surface emitted power concentrated within a small divergence angle of ±30°. [ABSTRACT FROM AUTHOR]