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Your search keyword '"Pogosov, W. V."' showing total 4 results
Start Over Author "Pogosov, W. V." Journal applied physics letters
4 results on '"Pogosov, W. V."'

1. Double Fe-impurity charge state in the topological insulator Bi2Se3

Author

Stolyarov, V. S., primary, Remizov, S. V., additional, Shapiro, D. S., additional, Pons, S., additional, Vlaic, S., additional, Aubin, H., additional, Baranov, D. S., additional, Brun, Ch., additional, Yashina, L. V., additional, Bozhko, S. I., additional, Cren, T., additional, Pogosov, W. V., additional, and Roditchev, D., additional

Published
2017
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2. Double Fe-impurity charge state in the topological insulator Bi2Se3.

Author

Stolyarov, V. S., Remizov, S. V., Shapiro, D. S., Pons, S., Vlaic, S., Aubin, H., Baranov, D. S., Brun, Ch., Yashina, L. V., Bozhko, S. I., Cren, T., Pogosov, W. V., and Roditchev, D.

Subjects
TOPOLOGICAL insulators, BISMUTH selenide, IRON, SCANNING tunneling microscopy, METAL inclusions, ELECTRON scattering, SEMICONDUCTOR doping profiles
Abstract

The influence of individual impurities of Fe on the electronic properties of topological insulator Bi2Se3 is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, and on the overall doping level of the crystal. We present a qualitative explanation of the observed phenomena in terms of tip-induced local band bending. Our observations evidence that the specific impurity neighborhood and the position of the Fermi energy with respect to both the Dirac point and bulk bands have to be taken into account when considering the electron scattering on the disorder in topological insulators. [ABSTRACT FROM AUTHOR]

Published
2017
Full Text
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4. Double Fe-impurity charge state in the topological insulator Bi2Se3.

Author

Stolyarov, V. S., Remizov, S. V., Shapiro, D. S., Pons, S., Vlaic, S., Aubin, H., Baranov, D. S., Brun, Ch., Yashina, L. V., Bozhko, S. I., Cren, T., Pogosov, W. V., and Roditchev, D.

Subjects
*TOPOLOGICAL insulators, *BISMUTH selenide, *IRON, *SCANNING tunneling microscopy, *METAL inclusions, *ELECTRON scattering, *SEMICONDUCTOR doping profiles
Abstract

The influence of individual impurities of Fe on the electronic properties of topological insulator Bi2Se3 is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, and on the overall doping level of the crystal. We present a qualitative explanation of the observed phenomena in terms of tip-induced local band bending. Our observations evidence that the specific impurity neighborhood and the position of the Fermi energy with respect to both the Dirac point and bulk bands have to be taken into account when considering the electron scattering on the disorder in topological insulators. [ABSTRACT FROM AUTHOR]

Published
2017
Full Text
View/download PDF

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