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Your search keyword '"Pattyn, H."' showing total 10 results
Start Over Author "Pattyn, H." Journal applied physics letters
10 results on '"Pattyn, H."'

9. Implantation temperature dependent distribution of NiSi[sub 2] formed by ion beam synthesis in....

Author

Vanhellemont, J., Bender, H., Wu, M.F., De Wachter, J., Hendrickx, P., Pattyn, H., Van Bavel, A.M., Langouche, G., Maenhoudt, M., and Bruynseraede, Y.

Subjects
SILICIDES, ION implantation, SURFACES (Physics)
Abstract

Examines the implantation temperature dependent distribution of nickel silicide layers formed by ion implantation in silicon. Formation of precipitates; Evolution of an epitaxial silicide surface layer.

Published
1993
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10. Channeled ion beam synthesis of heteroepitaxial Nd[sub 0.32]Y[sub 0.68]Si[sub 1.7] layers.

Author

Wu, M. F., Vantomme, A., Hogg, S., Pattyn, H., and Langouche, G.

Subjects
ION bombardment, EPITAXY
Abstract

Heteroepitaxial Nd[sub 0.32]Y[sub 0.68]Si[sub 1.7] layers with good crystalline quality (χ[sub min] of Nd and Y is 3.5% and 4.3%, respectively) have been prepared by high dose 65 keV Y and 80 keV Nd implantation into a Si(111) substrate using channeled ion beam synthesis. Although the disilicide of Nd only exists in a tetragonal or an orthorhombic phase which cannot be grown epitaxially on a Si(111) substrate, our results show that the addition of Y to the Nd–Si system forces the latter into a hexagonal structure. Rutherford backscattering/channeling and x-ray diffraction studies reveal that the lattice parameters of the Nd[sub 0.32]Y[sub 0.68]Si[sub 1.7] epilayer are a[sub epi]=0.3915 nm and c[sub epi]=0.4152 nm and that the epilayer is stable up to 950 °C. Annealing at 1000 °C results in partial transformation into other unidentified phases. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1998
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