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Start Over Author "Nygård J" Journal applied physics letters
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7. Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy.

Author

So\rensen, B. S., Aagesen, M., So\rensen, C. B., Lindelof, P. E., Martinez, K. L., and Nygård, J.

Subjects
FIELD-effect transistors, NANOWIRES, MOLECULAR beam epitaxy, CONDUCTION bands, SEMICONDUCTORS, HYSTERESIS, ELECTRON mobility
Abstract

We present the electric properties of p-InAs nanowire field-effect transistors showing ambipolar conduction. Be doped nanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. P-type conduction in InAs nanowires is challenging because of the Fermi-level pinning above the conduction band edge at the nanowire surface that leads to creation of an electron inversion layer. We demonstrate that this task is possible without a modified surface and report a strong temperature dependence (10–105) of the on-off ratio caused by the surface inversion layer. [ABSTRACT FROM AUTHOR]

Published
2008
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