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Epitaxial growth of CeO[sub 2](001) thin films on Si(001) substrates was achieved by electron beam evaporation. Reflection high-energy electron diffraction and cross-sectional high-resolution transmission electron microscopy established the formation of an epitaxial CeO[sub 2](001)/Si(001) structure with a cube-on-cube configuration. The epitaxial structure had to be formed at a temperature below 200 °C with a Si(001)-2x1, 1x2 reconstructed surface, and it could be formed even at room temperature. In order to improve the crystallinity, homoepitaxial growth conditions at a higher temperature with a high oxygen flow rate were also investigated. Homoepitaxy of ceria grown on a 5-nm-thick initial layer was demonstrated by θ/2θ-scan and φ-scan of x-ray diffraction. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A lower limit for the value of χ(3) associated with the two-photon resonance of the Γ1 biexcitons in CuCl at 1.6 K is found to be 5.4×10-5 esu. The upper bound of the two-photon resonance width is ΔE=0.02 meV. Broadening of the resonance occurs for light intensities I0>103 W/cm2. [ABSTRACT FROM AUTHOR]