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As the size of the semiconductor device decreases, the importance of the low resistance contacts to devices cannot be overstated. Here, we studied the contact resistance to buried nanometer thick δ-doped Ba1-xLaxSnO3 (BLSO) layers. We have used epitaxial 4% (x = 0.04) BLSO as a contact material, which has additional advantages of forming Ohmic contacts to BaSnO3 and providing thermal stability even at high temperatures. The contact resistance was measured by a modified transmission line method designed to eliminate the contribution from the resistance of the contact material. The upper bound for the contact resistance to a 12 nm thick δ-doped 1% BLSO conductive layer was measured to be 1.25 × 10−1or 2.87 × 10−7 Ω cm2. Our results show that it is possible to provide low resistance epitaxial edge contacts to an embedded nanometer-thick BLSO conductive layer using an ion-milling process. Our low resistance contact method can be easily extended to a two-dimensional electron gas at the oxide interfaces such as LaInO3/BaSnO3.