7 results on '"Muret P"'
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2. Metal oxide semiconductor structure using oxygen-terminated diamond
3. Comment on ‘‘Effect of sub-band-gap illumination on β-FeSi2/n-type Si diodes under reverse bias’’
4. Admittance of Al/GaAs Schottky contacts under forward bias as a function of interface preparation conditions
5. Relation between current-voltage characteristics and interface states at metal-semiconductor interfaces.
6. Type-II localized interface states and Si surface preparation for Ni, Pt, Al/Si Schottky diodes.
7. Comment on 'Effect of sub-band-gap illumination on Beta-FeSi[sub 2]/n-type Si diodes under....
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